Datasheet > CP230-TIP122

CP230-TIP122

更新时间： 2024-11-06 14:52:35

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页数	文件大小	规格书
21页	682K
描述
5A,100V Bare die,80.000 X 80.000 mils,Transistor-Bipolar Power (>1A)

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CP230-TIP122 数据手册

CP230-TIP122

NPN - Darlington Transistor Die

5.0 Amp, 100 Volt

www.centralsemi.com

The CP230-TIP122 die is a silicon NPN Darlington power transistor designed for low speed

switching and ampliﬁer applications.

MECHANICAL SPECIFICATIONS:

Die Size

80 x 80 MILS

8.0 MILS

Die Thickness

Base Bonding Pad Size

Emitter Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

18 x 27 MILS

34 x 34 MILS

Al - 30,000Å

Ti/Pd/Ag - 20,000Å

2.4 mils

4 INCHES

Gross Die Per Wafer

1,650

MAXIMUM RATINGS: (T =25°C)

Collector-Base Voltage

SYMBOL

UNITS

100

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

5.0

Continuous Collector Current

Peak Collector Current

5.0

8.0

Continuous Base Current

Operating and Storage Junction Temperature

120

°C

-65 to +150

J, stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=100V

200

µA

CBO

CEO

EBO

=50V

500

2.0

µA

=5.0V

I =100mA

100

CEO

CE(SAT)

BE(ON)

I =3.0A, I =12mA

2.0

4.0

2.5

I =5.0A, I =20mA

=3.0V, I =3.0A

=3.0V, I =500mA

1000

4.0

=3.0V, I =3.0A

=4.0V, I =3.0A, f=1.0MHz

MHz

=10V, I =0, f=100kHz

200

R0 (5-May 2016)

12 3 4 5 6 7...21

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