Datasheet > CP223-2N3866

CP223-2N3866

更新时间： 2024-09-16 14:55:07

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
9页	641K
描述
30V,400mA,5W Bare die,21.700 X 21.700 mils,Transistor-Small Signal (<=1A)

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CP223-2N3866 数据手册

CP223-2N3866

NPN - RF Transistor Die

0.4 Amp, 30 Volt

www.centralsemi.com

The CP223-2N3866 is a silicon NPN RF transistor designed for high frequency ampliﬁer and

oscillator applications.

MECHANICAL SPECIFICATIONS:

Die Size

21.7 x 21.7 MILS

9.0 MILS

Die Thickness

Base Bonding Pad Size

Emitter Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

3.2 MILS DIAMETER

3.4 x 3.4 MILS

Al – 30,000Å

Au – 12,000Å

2.7 MILS

4 INCHES

Gross Die Per Wafer

16,000

BACKSIDE COLLECTOR

MAXIMUM RATINGS: (T =25°C)

Collector-Base Voltage

SYMBOL

UNITS

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

3.5

Continuous Collector Current

Continuous Base Current

0.4

2.0

Operating and Storage Junction Temperature

T , T

-65 to +150

°C

stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=28V

μA

CEO

CEV

EBO

=55V, V

=3.5V

=1.5V

0.1

BE(OFF)

I =5.0mA, R =10Ω

3.5

CER

CBO

CEO

EBO

CE(SAT)

I =500μA

I =5.0mA

I =100μA

I =100mA, I =20mA

1.0

=5.0V, I =50mA

5.0

500

200

=5.0V, I =360mA

=15V, I =50mA, f=200MHz

MHz

=28V, I =0, f=1.0MHz

3.0

=28V, P =1.0W, f=400MHz (Figure 1)

out

=28V, P =1.0W, f=400MHz (Figure 1)

out

R0 (22-February 2017)

12 3 4 5 6 7...9

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