Datasheet > CP188-2N2484

CP188-2N2484

更新时间： 2024-04-09 18:57:58

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
11页	847K
描述
60V,50mA,360mW Bare die,14.568 X 14.568 mils,Transistor-Small Signal (<=1A)

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CP188-2N2484 数据手册

PROCESS CP188

Small Signal Transistor

NPN - Low Noise Amplifier Transistor Chip

PROCESS DETAILS

Process

EPITAXIAL PLANAR

Die Size

14.6 x 14.6 MILS

9.0 MILS

Die Thickness

Base Bonding Pad Area

Emitter Bonding Pad Area

Top Side Metalization

Back Side Metalization

3.9 x 3.9 MILS

5.5 x 5.5 MILS

Al - 30,000Å

Au-As - 18,000Å

GEOMETRY

GROSS DIE PER 4 INCH WAFER

54,599

PRINCIPAL DEVICE TYPES

CMPT2484

CMPT5088

CMPT5089

CMPT6428

CMPT6429

2N2484

BACKSIDE COLLECTOR

R5 (22-March 2010)

www.centralsemi.com

12 3 4 5 6 7...11

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型号	品牌	描述	获取价格	数据表
CP188-2N2484-CG	CENTRAL	Transistor	获取价格
CP188-2N2484-CM	CENTRAL	Transistor	获取价格
CP188-2N2919	CENTRAL	60V,30mA,300mW Bare die,14.568 X 14.568 mils,Transistor-Small Signal (<=1A)	获取价格
CP188-2N2920	CENTRAL	60V,30mA,300mW Bare die,14.568 X 14.568 mils,Transistor-Small Signal (<=1A)	获取价格
CP188-2N5088	CENTRAL	30V,50mA,625mW Bare die,14.568 X 14.568 mils,Transistor-Small Signal (<=1A)	获取价格
CP188-BC108	CENTRAL	25V,200mA,600mW Bare die,14.568 X 14.568 mils,Transistor-Small Signal (<=1A)	获取价格