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CP108-CZSH-4-CT PDF预览

CP108-CZSH-4-CT

更新时间: 2024-02-11 01:24:51
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
2页 214K
描述
Rectifier Diode,

CP108-CZSH-4-CT 技术参数

生命周期:ActiveReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.76
Base Number Matches:1

CP108-CZSH-4-CT 数据手册

 浏览型号CP108-CZSH-4-CT的Datasheet PDF文件第2页 
TM  
PROCESS CP108  
Schottky Rectifier  
Central  
Semiconductor Corp.  
Schottky Barrier Rectifier Chip - 2.0 Amp  
PROCESS DETAILS  
Process  
EPITAXIAL PLANAR  
Die Size  
Die Thickness  
52 X 52 MILS  
9 MILS  
Anode Bonding Pad Area  
Top Side Metalization  
Back Side Metalization  
47 X 47 MILS  
Al - 20,000Å  
Au - 10,000Å  
GEOMETRY  
GROSS DIE PER 4 INCH WAFER  
5,110  
PRINCIPAL DEVICE TYPES  
1N5817  
1N5818  
1N5819  
CXSH-4  
CZSH-4  
BACKSIDE CATHODE  
145 Adams Avenue  
Hauppauge, NY 11788 USA  
Tel: (631) 435-1110  
Fax: (631) 435-1824  
www.centralsemi.com  
R8 (9 -September 2003)  

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