5秒后页面跳转
CP108-CXSH-4-WN PDF预览

CP108-CXSH-4-WN

更新时间: 2024-02-29 10:31:20
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
2页 214K
描述
Rectifier Diode,

CP108-CXSH-4-WN 技术参数

生命周期:ActiveReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.76
Base Number Matches:1

CP108-CXSH-4-WN 数据手册

 浏览型号CP108-CXSH-4-WN的Datasheet PDF文件第2页 
TM  
PROCESS CP108  
Schottky Rectifier  
Central  
Semiconductor Corp.  
Schottky Barrier Rectifier Chip - 2.0 Amp  
PROCESS DETAILS  
Process  
EPITAXIAL PLANAR  
Die Size  
Die Thickness  
52 X 52 MILS  
9 MILS  
Anode Bonding Pad Area  
Top Side Metalization  
Back Side Metalization  
47 X 47 MILS  
Al - 20,000Å  
Au - 10,000Å  
GEOMETRY  
GROSS DIE PER 4 INCH WAFER  
5,110  
PRINCIPAL DEVICE TYPES  
1N5817  
1N5818  
1N5819  
CXSH-4  
CZSH-4  
BACKSIDE CATHODE  
145 Adams Avenue  
Hauppauge, NY 11788 USA  
Tel: (631) 435-1110  
Fax: (631) 435-1824  
www.centralsemi.com  
R8 (9 -September 2003)  

与CP108-CXSH-4-WN相关器件

型号 品牌 获取价格 描述 数据表
CP108-CXSH-4-WS CENTRAL

获取价格

Rectifier Diode,
CP108-CZSH-4-CT CENTRAL

获取价格

Rectifier Diode,
CP10944 CREE

获取价格

RGBX series
CP10944 LEDIL

获取价格

~30° medium beam optimized for CREE MC-E RGB
CP10944_18 LEDIL

获取价格

~30° medium beam optimized for CREE MC-E RGB
CP10945 LEDIL

获取价格

~50° 25° oval beam optimized for CREE MC-E
CP10945 CREE

获取价格

RGBX series
CP10945_18 LEDIL

获取价格

~50° 25° oval beam optimized for CREE MC-E
CP10C60 APOLLOELECTRON

获取价格

Standard Gate Silicon Controlled Rectifiers
CP10H100S CITC

获取价格

10A Surface Mount Trench Schottky Rectifier