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CNY70_09 PDF预览

CNY70_09

更新时间: 2024-01-04 18:50:05
品牌 Logo 应用领域
威世 - VISHAY 晶体传感器晶体管
页数 文件大小 规格书
11页 263K
描述
Reflective Optical Sensor with Transistor Output

CNY70_09 数据手册

 浏览型号CNY70_09的Datasheet PDF文件第2页浏览型号CNY70_09的Datasheet PDF文件第3页浏览型号CNY70_09的Datasheet PDF文件第4页浏览型号CNY70_09的Datasheet PDF文件第5页浏览型号CNY70_09的Datasheet PDF文件第6页浏览型号CNY70_09的Datasheet PDF文件第7页 
CNY70  
Vishay Semiconductors  
Reflective Optical Sensor with Transistor Output  
FEATURES  
Marking area  
• Package type: leaded  
• Detector type: phototransistor  
• Dimensions (L x W x H in mm): 7 x 7 x 6  
• Peak operating distance: < 0.5 mm  
E
D
• Operating range within > 20 % relative collector  
current: 0 mm to 5 mm  
21835  
Top view  
• Typical output current under test: IC = 1 mA  
• Emitter wavelength: 950 nm  
19158_1  
• Daylight blocking filter  
DESCRIPTION  
• Lead (Pb)-free soldering released  
The CNY70 is a reflective sensor that includes an infrared  
emitter and phototransistor in a leaded package which  
blocks visible light.  
• Compliant to RoHS directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
APPLICATIONS  
• Optoelectronic scanning and switching devices i.e., index  
sensing, coded disk scanning etc. (optoelectronic encoder  
assemblies).  
PRODUCT SUMMARY  
DISTANCE FOR  
MAXIMUM CTRrel  
(mm)  
DISTANCE RANGE FOR  
RELATIVE Iout > 20 %  
(mm)  
TYPICAL OUTPUT  
DAYLIGHT  
(1)  
PART NUMBER  
CURRENT UNDER TEST (2) BLOCKING FILTER  
(mA)  
INTEGRATED  
CNY70  
0
0 to 5  
1
Yes  
Notes  
(1)  
CTR: current transfere ratio, Iout/Iin  
Conditions like in table basic charactristics/sensors  
(2)  
ORDERING INFORMATION  
ORDERING CODE  
PACKAGING  
VOLUME (1)  
MOQ: 4000 pcs, 80 pcs/tube  
REMARKS  
CNY70  
Tube  
-
Note  
(1)  
MOQ: minimum order quantity  
ABSOLUTE MAXIMUM RATINGS (1)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
UNIT  
COUPLER  
Total power dissipation  
Ambient temperature range  
Storage temperature range  
Soldering temperature  
INPUT (EMITTER)  
Reverse voltage  
Tamb 25 °C  
Ptot  
Tamb  
Tstg  
Tsd  
200  
- 40 to + 85  
- 40 to + 100  
260  
mW  
°C  
°C  
Distance to case 2 mm, t 5 s  
°C  
VR  
IF  
5
V
mA  
A
Forward current  
50  
3
Forward surge current  
Power dissipation  
tp 10 µs  
IFSM  
PV  
Tj  
Tamb 25 °C  
100  
100  
mW  
°C  
Junction temperature  
Document Number: 83751  
Rev. 1.7, 17-Aug-09  
For technical questions, contact: sensorstechsupport@vishay.com  
www.vishay.com  
1

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