Datasheet > CNW11AV-2.300

CNW11AV-2.300

更新时间： 2024-02-09 21:33:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		输出元件光电
页数	文件大小	规格书
7页	125K
描述
Transistor Output Optocoupler, 1-Element, 4000V Isolation, DIP-6

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技术参数
数据手册

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CNW11AV-2.300 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.83	Coll-Emtr Bkdn Voltage-Min：	70 V
配置：	SINGLE	标称电流传输比：	50%
最大绝缘电压：	4000 V	元件数量：	1
光电设备类型：	TRANSISTOR OUTPUT OPTOCOUPLER	Base Number Matches：	1

CNW11AV-2.300 数据手册

HIGH VOLTAGE 6-PIN

PHOTOTRANSISTOR OPTOCOUPLERS

CNW11AV-1

CNW11AV-2

CNW11AV-3

DESCRIPTION

The CNW11AV series are high voltage optocouplers in a wide

body dual-in-line package (DIP).

Each optocoupler consists of a GaAs infrared emitter optically

coupled to a silicon npn phototransistor with the base connected.

FEATURES

• Minimum 2 mm isolation thickness between emitter and receiver

• A wide body encapsulation with a pin distance of 10.16 mm

• An external clearance 0f 9.6 mm minimum and an external

creepage of 10 mm minimum

SCHEMATIC

• High current transfer ratio and low saturation voltage,

making the device suitable for use with TTL integrated

circuits

• High degree of AC and DC insulation (4000 V (RMS) and

5656 V (DC))

CNW11AV-1/2/3

• Collector-emitter breakdown Voltage: 70 V

• Low isolation capacitance of 0.5 pF maximum

• UL recognized (File # E90700)

PIN 1. ANODE

2. CATHODE

3. NO CONNECTION

4. EMITTER

5. COLLECTOR

6. BASE

• VDE recognized (File # 76876)

- Ordering option ‘300’ (e.g. CNW11AV-1.300)

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Value

Units

TOTAL DEVICE

T_STG

-55 to 150

-40 to 100

°C

Storage Temperature Range

T_OPR

T_SOL

T_J

Ambient Operating Temperature Range

°C

260 for 10 sec

125

Lead Soldering Temperature

Junction Temperature

°C

EMITTER

I_F

100

Forward Current - Continuous

Forward Current - Peak (t_on= 10µs, δ = 0.01)

I_F(pk)

V_R

Reverse Voltage

Total Power Dissipation @ T_A= 25°C

200

2.0

mW/°C

P_D

I_C

Derate Linearly From 25°C

DETECTOR

100

Collector Current-Continuous

Emitter-Collector Voltage

Collector-Emitter Voltage

V_ECO

V_CEO

V_CBO

Collector-Base Voltage

Total Power Dissipation @ T_A= 25°C

200

mW/°C

P_D

Derate Linearly From 25°C

2.0

2001 Fairchild Semiconductor Corporation

DS300398

6/04/01

1 OF 7

www.fairchildsemi.com

12 3 4 5 6 7

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