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CNA1006N PDF预览

CNA1006N

更新时间: 2024-09-16 22:28:43
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松下 - PANASONIC /
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描述
Photo Interrupter

CNA1006N 数据手册

 浏览型号CNA1006N的Datasheet PDF文件第2页 
Transmissive Photosensors (Photo Interrupters)  
CNA1006N  
Photo Interrupter  
Unit : mm  
Slit width  
1.5±0.1  
For contactless SW, object detection  
1.5  
16.6  
11.8  
3.0+00..32  
A
Overview  
CNA1006N is a transmissive photosensor in which a high  
efficiency GaAs infrared light emitting diode is used as the light  
emitting element, and a high sensitivity phototransistor is used as  
the light detecting element. The two elements are arranged so as to  
face each other, and objects passing between them are detected.  
SEC A-A'  
Optical  
center  
A'  
4-0.45  
(2.54)  
2-3.3  
2-1.5  
2
(7.6)  
15.0  
Features  
Highly precise position detection : 0.3 mm  
3
12.6±0.3  
+0  
2-ø1.0  
(Note)  
–0.05  
2
3
1
4
Gap width : 3 mm  
Pin connection  
1
4
The type direetly attached to PCB (with positioning pins and  
fixing hooks)  
1: Anode 3: Collecter  
2: Cathode 4: Emitter  
1. Tolerance unless otherwise specified is ±0.2  
2. ( ) Dimension is reference  
3. Fitting strength is 2N min. (Static load)  
Absolute Maximum Ratings (Ta = 25˚C)  
Parameter  
Symbol Ratings Unit  
Reverse voltage (DC)  
Forward current (DC)  
Power dissipation  
Collector current  
VR  
3
50  
75  
20  
30  
5
V
mA  
mW  
mA  
V
Input (Light  
IF  
emitting diode)  
*1  
PD  
IC  
*1 Input power derating ratio is  
1.0 mW/˚C at Ta 25˚C.  
*2 Output power derating ratio is  
Collector to emitter voltage VCEO  
Output (Photo  
transistor)  
Emitter to collector voltage VECO  
V
1.33 mW/˚C at Ta 25˚C.  
*2  
Collector power dissipation PC  
100  
mW  
Operating ambient temperature  
Storage temperature  
Topr –25 to +85 ˚C  
Temperature  
Tstg – 30 to +100  
˚C  
Electrical Characteristics (Ta = 25˚C)  
Parameter  
Symbol  
Conditions  
min  
typ  
max Unit  
Forward voltage (DC)  
Reverse current (DC)  
VF IF = 20mA  
1.25  
1.4  
10  
V
µA  
nA  
mA  
V
Input  
characteristics  
IR VR = 3V  
Output characteristics Collector cutoff current  
ICEO VCE = 10V  
10  
5
200  
14  
Collector current  
IC VCE = 5V, IF = 20mA  
0.7  
Transfer  
characteristics  
Collector to emitter saturation voltage VCE(sat) IF = 40mA, IC = 1mA  
0.4  
Response time  
tr , tf* VCC = 5V, IC = 1mA, RL = 100  
µs  
* Switching time measurement circuit  
Sig.IN  
VCC  
td : Delay time  
(Input pulse)  
tr : Rise time (Time required for the collector current to increase  
from 10% to 90% of its final value)  
90%  
10%  
Sig.OUT  
(Output pulse)  
td  
tf : Fall time (Time required for the collector current to decrease  
from 90% to 10% of its initial value)  
50  
RL  
tr  
tf  
1

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