IS/ISO 9002
Lic# QSC/L- 000019.3
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
SILICON PLANAR EPITAXIAL TRANSISTORS
CN8050 NPN
CN8550 PNP
TO-92
Plastic Package
C
B
E
ABSOLUTE MAXIMUM RATINGS
VALUE
25
DESCRIPTION
SYMBOL
UNITS
VCEO
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current
V
V
VCBO
VEBO
IC
40
6.0
V
800
1.0
mA
A
ICM
IB
Peak Collector Current
Base Current
100
625
150
mA
mW
ºC
ºC
Power Dissipation@ Ta=25ºC
*Ptot
Tj
Junction Temperature
Tstg
- 55 to +150
Storage Temperature Range
THERMAL RESISTANCE
*Rth (j-a)
200
Junction to Ambient in free air
K/W
* Valid provided that leads are kept at ambient temperature at a distance of 2mm from case.
ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Otherwise Specified)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
25
40
6
TYP
MAX
UNITS
VCEO
IC=2mA, IB=0
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
DC Current Gain
V
V
V
VCBO
VEBO
hFE
IC=10mA, IE=0
IE=100mA, IC=0
VCE=1V, IC=5mA
VCE=1V, IC=100mA
45
120
120
160
300
200
300
CN8050C/CN8550C
CN8050D/CN8550D
VCE=1V, IC=350mA
VCB=35V, IE = 0
60
ICBO
Collector Cut off Current
100
100
0.5
1.2
nA
nA
V
IEBO
VBE=3V, IC = 0
Emitter Cut off Current
VCE(sat)
VBE(sat)
IC=500mA, IB=50mA
IC=500mA, IB=50mA
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
V
IC=10mA, VCE=5V,
f=50MHz
fT
Gain Bandwidth Product
100
MHz
Ccbo
VCB=10V, f=1MHz
PNP
Collector Base Capacitance
35
20
pF
pF
NPN
Data Sheet
Page 1 of 3
Continental Device India Limited