Datasheet > CN8550C

CN8550C

更新时间： 2024-09-16 23:42:55

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
3页	50K
描述
BJT

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数据手册

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CN8550C 数据手册

IS/ISO 9002

Lic# QSC/L- 000019.3

Continental Device India Limited

An IS/ISO 9002 and IECQ Certified Manufacturer

SILICON PLANAR EPITAXIAL TRANSISTORS

CN8050 NPN

CN8550 PNP

TO-92

Plastic Package

ABSOLUTE MAXIMUM RATINGS

VALUE

DESCRIPTION

SYMBOL

UNITS

V_CEO

Collector Emitter Voltage

Collector Base Voltage

Emitter Base Voltage

Collector Current

V_CBO

V_EBO

I_C

6.0

800

1.0

I_CM

I_B

Peak Collector Current

Base Current

100

625

150

ºC

Power Dissipation@ T_a=25ºC

*P_tot

T_j

Junction Temperature

T_stg

- 55 to +150

Storage Temperature Range

THERMAL RESISTANCE

*R_{th (j-a)}

200

Junction to Ambient in free air

K/W

* Valid provided that leads are kept at ambient temperature at a distance of 2mm from case.

ELECTRICAL CHARACTERISTICS (T_a=25ºC Unless Otherwise Specified)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNITS

V_CEO

I_C=2mA, I_B=0

Collector Emitter Voltage

Collector Base Voltage

Emitter Base Voltage

DC Current Gain

V_CBO

V_EBO

h_FE

I_C=10mA, I_E=0

I_E=100mA, I_C=0

V_CE=1V, I_C=5mA

V_CE=1V, I_C=100mA

120

160

300

200

300

CN8050C/CN8550C

CN8050D/CN8550D

V_CE=1V, I_C=350mA

V_CB=35V, I_E= 0

I_CBO

Collector Cut off Current

100

0.5

1.2

I_EBO

V_BE=3V, I_C= 0

Emitter Cut off Current

V_CE(sat)

V_BE(sat)

I_C=500mA, I_B=50mA

Collector Emitter Saturation Voltage

Base Emitter Saturation Voltage

I_C=10mA, V_CE=5V,

f=50MHz

f_T

Gain Bandwidth Product

100

MHz

C_cbo

V_CB=10V, f=1MHz

PNP

Collector Base Capacitance

NPN

Data Sheet

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Continental Device India Limited

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