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CMYD4448 PDF预览

CMYD4448

更新时间: 2024-11-24 14:54:35
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
3页 641K
描述
250mA,120V Surface mount Diode-Switching Dual

CMYD4448 数据手册

 浏览型号CMYD4448的Datasheet PDF文件第2页浏览型号CMYD4448的Datasheet PDF文件第3页 
CMYD4448  
SURFACE MOUNT SILICON  
DUAL, ISOLATED  
HIGH SPEED  
www.centralsemi.com  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMYD4448  
contains two (2) isolated configuration silicon switching  
diodes, manufactured by the epitaxial planar process,  
epoxy molded in an SOT-543 surface mount package.  
This device is designed for high speed switching  
applications.  
SWITCHING DIODE  
MARKING CODE: C48  
SOT-543 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Peak Repetitive Reverse Voltage  
V
120  
250  
RRM  
Continuous Forward Current  
I
mA  
mA  
A
F
Peak Repetitive Forward Current  
Peak Forward Surge Current, tp=1.0μs  
Peak Forward Surge Current, tp=1.0s  
Power Dissipation  
I
500  
FRM  
I
4.0  
FSM  
I
1.0  
A
FSM  
P
250  
mW  
°C  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
500  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)  
A
SYMBOL TEST CONDITIONS  
MIN  
TYP  
MAX  
300  
100  
500  
UNITS  
nA  
μA  
nA  
V
I
I
I
V =50V  
R
R
R
R
V =50V, T =125°C  
R
A
V =100V  
R
BV  
I =100μA  
120  
0.55  
0.67  
0.85  
150  
0.59  
0.72  
0.91  
R
R
V
V
V
I =1.0mA  
0.65  
0.77  
1.0  
V
F
F
F
F
I =10mA  
V
F
I =100mA  
V
F
C
V =0, f=1.0MHz  
1.5  
pF  
ns  
J
R
t
I =I =10mA, I =1.0mA, R =100Ω  
2.0  
4.0  
rr  
R
F
rr  
L
R2 (19-June 2019)  

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