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CMT9926G PDF预览

CMT9926G

更新时间: 2024-11-18 03:26:07
品牌 Logo 应用领域
虹冠电子 - CHAMP /
页数 文件大小 规格书
7页 216K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

CMT9926G 技术参数

生命周期:Contact Manufacturer包装说明:SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code:unknown风险等级:5.84
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (Abs) (ID):6 A最大漏极电流 (ID):6 A
最大漏源导通电阻:0.04 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
功耗环境最大值:2 W最大功率耗散 (Abs):2 W
最大脉冲漏极电流 (IDM):20 A表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON

CMT9926G 数据手册

 浏览型号CMT9926G的Datasheet PDF文件第2页浏览型号CMT9926G的Datasheet PDF文件第3页浏览型号CMT9926G的Datasheet PDF文件第4页浏览型号CMT9926G的Datasheet PDF文件第5页浏览型号CMT9926G的Datasheet PDF文件第6页浏览型号CMT9926G的Datasheet PDF文件第7页 
CMT9926G  
N-CHANNEL ENHANCEMENT MODE POWER MOSFET  
GENERAL DESCRIPTION  
FEATURES  
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20V N-Channel Enhancement-Mode MOSFET  
Vds=20V  
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Advanced trench process technology  
High Density Cell Design For Ultra Low On-Resistance  
High Power and Current handing capacity  
Fully Characterized Avalanche Voltage and Current  
Ideal for Li ion battery pack applications  
RDS(ON)=30 m(TYP.) , VGS @2.5V, Ids@5.2A  
RDS(ON)=22 m(TYP.), VGS @4.5V, Ids@6A  
APPLICATIONS  
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Power Management in Notebook  
Portable Equipment  
Battery Powered System  
DC/DC Converter  
Load Switch  
DSC  
LCD Display inverter  
PIN CONFIGURATION  
SYMBOL  
8-PIN SOP (S08)  
Top View  
N-Channel MOSFET  
ORDERING INFORMATION  
Part Number  
Package  
CMT9926G  
SOP-8  
*Note: G : Suffix for Pb Free Product  
2007/01/02 Rev1.0  
Champion Microelectronic Corporation  
Page 1  

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