生命周期: | Contact Manufacturer | 包装说明: | SMALL OUTLINE, R-PDSO-G8 |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 20 V |
最大漏极电流 (Abs) (ID): | 6 A | 最大漏极电流 (ID): | 6 A |
最大漏源导通电阻: | 0.04 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G8 | 元件数量: | 2 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 最低工作温度: | -55 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 2 W | 最大功率耗散 (Abs): | 2 W |
最大脉冲漏极电流 (IDM): | 20 A | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CMTI-65601L-25:R | TEMIC |
获取价格 |
Standard SRAM, 1MX1, 25ns, CMOS, PDSO32, | |
CMTI-65601L-25SHXXX | TEMIC |
获取价格 |
Standard SRAM, 1MX1, 25ns, CMOS, PDSO32, | |
CMTI-65601L-25SHXXX:D | TEMIC |
获取价格 |
Standard SRAM, 1MX1, 25ns, CMOS, PDSO32, | |
CMTI-65601L-25SHXXX:RD | TEMIC |
获取价格 |
Standard SRAM, 1MX1, 25ns, CMOS, PDSO32, | |
CMTI-65601L-35SHXXX:D | TEMIC |
获取价格 |
Standard SRAM, 1MX1, 35ns, CMOS, PDSO32, | |
CMTI-65601L-35SHXXX:R | TEMIC |
获取价格 |
Standard SRAM, 1MX1, 35ns, CMOS, PDSO32, | |
CMTI-65601L-45 | TEMIC |
获取价格 |
Standard SRAM, 1MX1, 45ns, CMOS, PDSO32, | |
CMTI-65601L-45:D | TEMIC |
获取价格 |
Standard SRAM, 1MX1, 45ns, CMOS, PDSO32, | |
CMTI-65601L-45:RD | TEMIC |
获取价格 |
Standard SRAM, 1MX1, 45ns, CMOS, PDSO32, | |
CMTI-65601L-55 | TEMIC |
获取价格 |
Standard SRAM, 1MX1, 55ns, CMOS, PDSO32, |