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CMT4410 PDF预览

CMT4410

更新时间: 2024-09-14 22:40:15
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其他 - ETC /
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6页 185K
描述
N-CHANNEL 30V MOSFET

CMT4410 数据手册

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CMT4410  
N-CHANNEL 30V MOSFET  
STRUCTURE  
FEATURES  
Silicon N-channel MOSFET  
Low Qg  
Low on-resistance  
Excellent resistance to damage from static electricity  
PIN CONFIGURATION  
SYMBOL  
8-PIN SOP (S08)  
Top View  
DRAIN  
1
2
3
4
DRAIN  
DRAIN  
DRAIN  
DRAIN  
8
7
6
5
SOURCE  
SOURCE  
SOURCE  
GATE  
*
GATE  
SOURCE  
N-Channel MOSFET  
* Gate Protection Diode is included between the gate and the source  
terminals to protect the diode against static electricity when the product  
is in use. Use a protection circuit when the fixed voltage are exceeded.  
ORDERING INFORMATION  
Part Number  
Package  
CMT4410  
8-PIN SOP (S08)  
ABSOLUTE MAXIMUM RATINGS (Ta = 25)  
Rating  
Drain-to-Source Voltage  
Drain to Current Continuous (at 25)  
Pulsed*  
Symbol  
VDS  
ID  
Value  
30  
10  
Unit  
V
A
IDP  
40  
Reverse Drain to Current Continuous (at 25)  
Pulsed*  
Source Current (Body Diode) Continuous (at 25)  
Pulsed*  
IR  
IDRP  
IS  
ISP  
10  
40  
1.3  
5.2  
A
A
Gate-to-Source Voltage Continue  
Total Power Dissipation (TC = 25)  
Storage Temperature Range  
Channel Temperature  
VGS  
PD  
TSTG  
Tch  
±20  
2.0  
-55 to 150  
150  
V
W
* Pw10ms, Duty cycle1%  
2001/06/18 Draft  
Champion Microelectronic Corporation  
Page 1  

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