Datasheet > CMT35N03G

CMT35N03G

更新时间： 2024-09-10 03:26:07

品牌	Logo	应用领域
虹冠电子 - CHAMP		/
页数	文件大小	规格书
6页	237K
描述
25V N-CHANNEL ENHANCEMENT-MODE MOSFET

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中文翻译

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数据手册

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CMT35N03G 数据手册

CMT35N03G

25V N-C^HANNELENHANCEMENT-MODE MOSFET

APPLICATION

FEATURES

Vds=25V

Advanced trench process technology

_DS(ON)=8.5 mΩ (Max.) , VGS @10V, Ids@30A

_DS(ON)=13 mΩ (Max.), VGS @4.5V, Ids@30A

High Density Cell Design For Ultra Low On-Resistance

Fully Characterized Avalanche Voltage and Current

PIN CONFIGURATION

SYMBOL

TO-252

Front View

N-Channel MOSFET

Maximum Ratings and Thermal Characteristics

(TA=25℃ unless otherwise notes)

Rating

Symbol

V_DS

Value

Unit

Drain - Source Voltage

±20

Gate -Source Voltage

V_GS

Continuous Drain Current

I_D

Pulsed Drain Current

I_DM

260

Maximum Power Dissipation

T_A=25℃

T_A=75℃

P_D

Operating Junction and Storage Temperature Range

Junction – to –Case Thermal Resistance

T_J/ T_STG

-55 to150

1.8

℃

℃/W

θJC

θJA

Junction – to Ambient Thermal Resistance (PCB mount)

Note : 1. Repetitive Rating : Pulse width limited by the Maximum junction temperation

2. 1-in²2oz Cu PCB board

3. Guaranteed by design ; not subject to production testing

2007/03/15 Rev1.0

Champion Microelectronic Corporation

Page 1

12 3 4 5 6

中文翻译

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