Datasheet > CMT14N50

CMT14N50

更新时间： 2024-11-05 03:26:07

品牌	Logo	应用领域
虹冠电子 - CHAMP		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
8页	253K
描述
POWER FIELD EFFECT TRANSISTOR

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CMT14N50 数据手册

CMT14N50

POWER FIELD EFFECT TRANSISTOR

GENERAL DESCRIPTION

FEATURES

This high voltage MOSFET uses an advanced termination ꢀ

scheme to provide enhanced voltage-blocking capability ꢀ

without degrading performance over time. In addition, this ꢀ

advanced MOSFET is designed to withstand high energy in

Robust High Voltage Termination

Avalanche Energy Specified

Source-to-Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

avalanche and commutation modes. The new energy

ꢀ

Diode is Characterized for Use in Bridge Circuits

I_DSSand V_DS(on) Specified at Elevated Temperature

efficient design also offers a drain-to-source diode with a ꢀ

fast recovery time. Designed for high voltage, high speed

switching applications in power supplies, converters and

PWM motor controls, these devices are particularly well

suited for bridge circuits where diode speed and

commutating safe operating areas are critical and offer

additional and safety margin against unexpected voltage

transients.

PIN CONFIGURATION

SYMBOL

TO-3P

Top View

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS

Rating

Drain to Current － Continuous

Symbol

I_D

Value

Unit

－ Pulsed

I_DM

Gate-to-Source Voltage － Continue

－ Non-repetitive

Total Power Dissipation

V_GS

V_GSM

P_D

±20

±40

190

Derate above 25℃

1.5

-55 to 150

588

W/℃

℃

Operating and Storage Temperature Range

Single Pulse Drain-to-Source Avalanche Energy － T_J= 25℃

(V_DD= 100V, V_GS= 10V, I_L= 14A, L = 6mH, R_G= 25Ω)

Thermal Resistance － Junction to Case

－ Junction to Ambient

T_J, T_STG

E_AS

θ_JC

θ_JA

T_L

0.65

260

℃/W

Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds

℃

2002/12/18 Preliminary

Champion Microelectronic Corporation

Page 1

12 3 4 5 6 7 8

中文翻译

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