5秒后页面跳转
CMST6427ETRLEADFREE PDF预览

CMST6427ETRLEADFREE

更新时间: 2024-11-19 13:02:55
品牌 Logo 应用领域
CENTRAL 晶体小信号双极晶体管达林顿晶体管光电二极管放大器
页数 文件大小 规格书
2页 93K
描述
Transistor

CMST6427ETRLEADFREE 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.61最大集电极电流 (IC):0.5 A
配置:DARLINGTON最小直流电流增益 (hFE):15000
最高工作温度:150 °C极性/信道类型:NPN
最大功率耗散 (Abs):0.275 W子类别:Other Transistors
表面贴装:YESBase Number Matches:1

CMST6427ETRLEADFREE 数据手册

 浏览型号CMST6427ETRLEADFREE的Datasheet PDF文件第2页 
TM  
CMST6427E  
Central  
Semiconductor Corp.  
ENHANCED SPECIFICATION  
SURFACE MOUNT, SUPERminiTM  
SILICON NPN DARLINGTON  
TRANSISTOR  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMST6427E is an  
Enhanced Specification, SUPERminiTM, NPN Silicon  
Darlington Transistor. High DC Current gains, coupled  
with a Low Saturation Voltage, make this an excellent  
choice for industrial/consumer applications where  
operational efficiency and small size are top priority.  
MARKING CODE : C46  
SOT-323 CASE  
APPLICATIONS:  
FEATURES:  
HIGH CURRENT (500mA MAX)  
MOTOR DRIVERS  
HIGH DC CURRENT GAIN (15K MIN)  
RELAY DRIVERS  
LOW SATURATION VOLTAGE (V  
= 0.8V MAX)  
CE(SAT)  
PRE-AMPLIFIER INPUT APPLICATIONS  
HIGH INPUT IMPEDANCE  
VOLTAGE REGULATOR CONTROLS  
SUPERminiSOT-323 SURFACE MOUNT PACKAGE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
A
SYMBOL  
UNITS  
V
Collector-Base Voltage  
V
60  
CBO  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
V
60  
40  
V
V
CES  
V
CEO  
Emitter-Base Voltage  
Continuous Collector Current  
Power Dissipation  
V
12  
V
EBO  
I
500  
275  
mA  
mW  
C
P
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T ,T  
-65 to +150  
455  
°C  
°C/W  
J
stg  
Θ
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
100  
100  
100  
UNITS  
nA  
nA  
nA  
V
I
V
V
V
=30V  
=25V  
=10V  
CBO  
CB  
CE  
BE  
I  
CEO  
I
EBO  
BV  
BV  
BV  
I =100µA  
60  
60  
40  
14  
CBO  
CES  
CEO  
EBO  
C
I =100µA  
C
V
I =10mA  
V
C
BV  
V  
I =10µA  
E
V
I =50mA, I =0.5mA  
0.80  
0.85  
1.0  
V
CE(SAT)  
CE(SAT)  
CE(SAT)  
C
B
V
I =100mA, I =0.1mA  
V
C
B
V  
I =500mA, I =0.5mA  
V
C
B
Enhanced Specification  
R0 (22-March 2006)  

与CMST6427ETRLEADFREE相关器件

型号 品牌 获取价格 描述 数据表
CMST6427ETRPBFREE CENTRAL

获取价格

暂无描述
CMST7410 CENTRAL

获取价格

SURFACE MOUNT SUPERmini COMPLEMENTARY SILICON LOW VCE(SAT) TRANSISTORS
CMST7410LEADFREE CENTRAL

获取价格

Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC,
CMST7410PBFREE CENTRAL

获取价格

暂无描述
CMST7410TR CENTRAL

获取价格

Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC,
CMST7410TRLEADFREE CENTRAL

获取价格

Transistor
CMST7410TRPBFREE CENTRAL

获取价格

Transistor,
CMSTEI PANDUIT

获取价格

ST Mini-Com® Fiber Optic Adapter Modules
CMSTZBU PANDUIT

获取价格

ST Mini-Com® Fiber Optic Adapter Modules
CMSZ5221B CENTRAL

获取价格

250 mW ZENER DIODE 5% TOLERANCE