Datasheet > CMST5089BKPBFREE

CMST5089BKPBFREE

更新时间： 2024-11-20 08:16:31

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
2页	402K
描述
Transistor,

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中文翻译

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数据手册

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CMST5089BKPBFREE 数据手册

CMST5088

CMST5089

www.centralsemi.com

SURFACE MOUNT

NPN SILICON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMST5088,

CMST5089 types are NPN silicon transistors

manufactured by the epitaxial planar process, epoxy

molded in a SUPERmini™ surface mount package,

designed for applications requiring high gain and low

noise.

MARKING CODES: CMST5088: 1QC

CMST5089: 1RC

SOT-323 CASE

MAXIMUM RATINGS: (T =25°C)

SYMBOL

CMST5088

CMST5089

UNITS

Collector-Base Voltage

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

4.5

Continuous Collector Current

Power Dissipation

°C

275

Operating and Storage Junction Temperature

Thermal Resistance

T , T

stg

-65 to +150

455

°C/W

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

CMST5088

CMST5089

SYMBOL

TEST CONDITIONS

MIN

MAX

MIN

MAX

UNITS

=20V

=15V

=3.0V

=4.5V

CBO

EBO

100

I =100μA

4.5

CBO

CEO

EBO

I =1.0mA

I =100μA

I =10mA, I =1.0mA

0.5

0.8

900

0.5

0.8

1200

CE(SAT)

BE(SAT)

I =10mA, I =1.0mA

=5.0V, I =0.1mA

300

350

300

400

450

400

=5.0V, I =1.0mA

=5.0V, I =10mA

=5.0V, I =500μA, f=20MHz

MHz

=5.0V, I =0, f=1.0MHz

4.0

1400

4.0

1800

=0.5V, I =0, f=1.0MHz

=5.0V, I =1.0mA, f=1.0kHz

350

450

=5.0V, I =100μA, R =10kΩ

C S

f=10Hz to 15.7kHz

3.0

2.0

R4 (9-February 2010)

中文翻译

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