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CMS06(TE12L,Q,M) PDF预览

CMS06(TE12L,Q,M)

更新时间: 2024-11-21 20:10:59
品牌 Logo 应用领域
东芝 - TOSHIBA 测试光电二极管
页数 文件大小 规格书
5页 156K
描述
RECT SCHOTTKY 30V 2A 3-4E1A

CMS06(TE12L,Q,M) 技术参数

生命周期:Active包装说明:3-4E1A, M-FLAT-2
Reach Compliance Code:unknown风险等级:1.48
应用:GENERAL PURPOSE最小击穿电压:30 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.37 V
JESD-30 代码:R-PDSO-F2最大非重复峰值正向电流:40 A
元件数量:1相数:1
端子数量:2最高工作温度:125 °C
最低工作温度:-40 °C最大输出电流:2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE最大重复峰值反向电压:30 V
最大反向电流:3000 µA反向测试电压:30 V
表面贴装:YES技术:SCHOTTKY
端子形式:FLAT端子位置:DUAL
Base Number Matches:1

CMS06(TE12L,Q,M) 数据手册

 浏览型号CMS06(TE12L,Q,M)的Datasheet PDF文件第2页浏览型号CMS06(TE12L,Q,M)的Datasheet PDF文件第3页浏览型号CMS06(TE12L,Q,M)的Datasheet PDF文件第4页浏览型号CMS06(TE12L,Q,M)的Datasheet PDF文件第5页 
CMS06  
TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type  
CMS06  
Switching Mode Power Supply Applications  
Unit: mm  
Portable Equipment Battery Applications  
Forward voltage: V  
Average forward current: I  
Repetitive peak reverse voltage: V  
Suitable for compact assembly due to small surface-mount package  
= 0.37 V (max)  
FM  
= 2.0 A  
F (AV)  
= 30 V  
RRM  
“MFLATTM” (Toshiba package name)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Repetitive peak reverse voltage  
Average forward current  
Symbol  
Rating  
Unit  
V
V
30  
RRM  
2.0  
(Note 1)  
I
A
F (AV)  
Peak one cycle surge forward current  
(non-repetitive)  
I
40 (50 Hz)  
A
FSM  
Junction temperature  
T
j
40~125  
40~150  
°C  
°C  
JEDEC  
JEITA  
Storage temperature  
T
stg  
TOSHIBA  
3-4E1A  
Note 1: T= 82.8°C: Rectangular waveform (α = 180°), V = 15 V  
R
Weight: 0.023 g (typ.)  
Note 2: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating  
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
V
V
V
V
I
I
I
= 0.5 A  
= 1.0 A  
= 2.0 A  
0.26  
0.28  
0.32  
0.09  
1.4  
FM (1)  
FM (2)  
FM (3)  
FM  
FM  
FM  
Peak forward voltage  
0.37  
I
V
V
V
= 5 V  
RRM  
RRM  
RRM  
RRM  
Repetitive peak reverse current  
Junction capacitance  
mA  
pF  
I
= 30 V  
3.0  
C
= 10 V, f = 1.0 MHz  
R
130  
j
Device mounted on a ceramic board  
60  
(soldering land: 2 mm × 2 mm)  
Thermal resistance  
Thermal resistance  
R
°C/W  
°C/W  
th (j-a)  
Device mounted on a glass-epoxy  
board  
135  
16  
(soldering land: 6 mm × 6 mm)  
R
th (j-)  
1
2006-11-13  

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