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CMR3-06TR13 PDF预览

CMR3-06TR13

更新时间: 2024-11-26 15:29:43
品牌 Logo 应用领域
CENTRAL 光电二极管
页数 文件大小 规格书
2页 333K
描述
Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, SMC, 2 PIN

CMR3-06TR13 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:SMC, 2 PIN
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.27其他特性:HIGH RELIABILITY
应用:GENERAL PURPOSE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.2 VJESD-30 代码:R-PDSO-C2
JESD-609代码:e0最大非重复峰值正向电流:200 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:3 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:600 V
最大反向电流:5 µA子类别:Rectifier Diodes
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

CMR3-06TR13 数据手册

 浏览型号CMR3-06TR13的Datasheet PDF文件第2页 
CMR3-02 CMR3-08  
CMR3-04 CMR3-10  
CMR3-06 CMR3-11  
www.centralsemi.com  
SURFACE MOUNT SILICON  
GENERAL PURPOSE RECTIFIERS  
3.0 AMP, 200 THRU 1100 VOLT  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMR3-02 series  
3.0 Amp surface mount silicon rectifiers are highly reliable  
components designed for use in all types of commercial,  
industrial, entertainment, computer, and automotive  
applications. To order devices on 16mm Tape and  
Reel (3000/13” Reel), add TR13 suffix to part number.  
MARKING CODE: SEE MARKING CODE TABLE ON  
FOLLOWING PAGE  
SMC CASE  
FEATURES:  
• High reliability  
• Glass passivated chip  
• Special selections available  
• “C” bend construction provides strain  
relief when mounted on PC board  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
A
CMR3 CMR3 CMR3 CMR3 CMR3 CMR3  
SYMBOL -02  
-04  
400  
400  
280  
-06  
600  
600  
420  
-08  
800  
800  
560  
-10  
1000  
1000  
700  
-11  
1100  
1100  
770  
UNITS  
Peak Repetitive Reverse Voltage  
DC Blocking Voltage  
V
200  
200  
140  
V
V
RRM  
V
R
RMS Reverse Voltage  
V
V
R(RMS)  
Average Forward Current (T =75°C)  
A
I
3.0  
A
O
Peak Forward Surge Current, tp=8.3ms  
I
200  
A
FSM  
Operating and Storage Junction Temperature T , T  
-65 to +175  
10  
°C  
°C/W  
J
stg  
Thermal Resistance  
Θ
JL  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
V =Rated V  
5.0  
μA  
μA  
V
R
R
RRM  
RRM  
I
V =Rated V  
, T =125°C  
250  
1.2  
R
R
A
V
I =3.0A  
F
F
R5 (11-September 2013)  

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