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CMR3-02BK PDF预览

CMR3-02BK

更新时间: 2024-11-07 13:02:07
品牌 Logo 应用领域
CENTRAL 整流二极管光电二极管
页数 文件大小 规格书
2页 275K
描述
Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon,

CMR3-02BK 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:ActiveReach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.26其他特性:HIGH RELIABILITY
应用:GENERAL PURPOSE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.2 VJESD-30 代码:R-PDSO-C2
JESD-609代码:e0最大非重复峰值正向电流:200 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:3 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:200 V
最大反向电流:5 µA子类别:Rectifier Diodes
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

CMR3-02BK 数据手册

 浏览型号CMR3-02BK的Datasheet PDF文件第2页 
CMR3-02  
CMR3-04  
CMR3-06  
CMR3-08  
CMR3-10  
CMR3-11  
www.centralsemi.com  
SURFACE MOUNT  
GENERAL PURPOSE  
SILICON RECTIFIER  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMR3-02 Series  
3.0 Amp Surface Mount Silicon Rectifier is a high  
quality, well constructed, highly reliable component  
designed for use in all types of commercial, industrial,  
entertainment, computer, and automotive applications.  
To order devices on 16mm Tape and Reel (3000/13”  
Reel), add TR13 suffix to part number.  
3 AMP, 200 THRU 1100 VOLTS  
MARKING CODE: SEE MARKING CODE TABLE ON  
FOLLOWING PAGE  
SMC CASE  
FEATURES:  
• Low cost  
• Glass passivated chip  
• Special selections available  
• High reliability  
• “C” bend construction provides strain relief  
when mounted on pc board  
• Superior lot to lot consistency  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
A
CMR3 CMR3 CMR3 CMR3 CMR3 CMR3  
SYMBOL -02  
-04  
400  
400  
280  
-06  
600  
600  
420  
-08  
800  
800  
560  
-10  
1000  
1000  
700  
-11  
1100  
1100  
770  
UNITS  
Peak Repetitive Reverse Voltage  
DC Blocking Voltage  
V
200  
200  
140  
V
V
RRM  
V
R
RMS Reverse Voltage  
V
V
R(RMS)  
Average Forward Current (T =75°C)  
A
I
3.0  
A
O
Peak Forward Surge Current, tp=8.3ms  
I
200  
A
FSM  
Operating and Storage Junction Temperature T , T  
-65 to +175  
10  
°C  
°C/W  
J
stg  
Thermal Resistance  
Θ
JL  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MAX  
5.0  
UNITS  
µA  
I
I
V =Rated V  
R
R
RRM  
RRM  
V =Rated V  
, T =125°C  
250  
1.2  
µA  
R
R
A
V
I =3.0A  
V
F
F
R4 (27-January 2011)  

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