Datasheet > CMPTH10_10

CMPTH10_10

更新时间： 2024-09-26 09:27:47

品牌	Logo	应用领域
CENTRAL		晶体晶体管
页数	文件大小	规格书
2页	323K
描述
SURFACE MOUNT NPN SILICON RF TRANSISTOR

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CMPTH10_10 数据手册

CMPTH10

www.centralsemi.com

SURFACE MOUNT

NPN SILICON

RF TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPTH10 type

is an NPN silicon RF transistor manufactured by the

epitaxial planar process, epoxy molded in a surface

mount package, designed for low noise UHF/VHF

amplifier and high output oscillator applications.

MARKING CODE: C3E

SOT-23 CASE

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Collector-Base Voltage

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

3.0

Power Dissipation

350

°C

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +150

357

stg

°C/W

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

100

UNITS

=25V

CBO

EBO

=2.0V

100

I =100µA

3.0

CBO

CEO

I =1.0mA

I =10µA

EBO

I =4.0mA, I =0.4mA

0.50

0.95

CE(SAT)

BE(ON)

=10V, I =4.0mA

=10V, I =4.0mA, f=100MHz

650

MHz

=10V, I =0, f=1.0MHz

0.70

0.65

9.0

=10V, I =0, f=1.0MHz

rb’C

=10V, I =4.0mA, f=31.8MHz

R5 (3-February 2010)

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