Datasheet > CMPD7000E_10

CMPD7000E_10

更新时间： 2024-09-23 09:27:43

品牌	Logo	应用领域
CENTRAL		二极管开关
页数	文件大小	规格书
2页	465K
描述
ENHANCED SPECIFICATION SURFACE MOUNT DUAL, IN SERIES SILICON SWITCHING DIODES

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CMPD7000E_10 数据手册

CMPD7000E

ENHANCED SPECIFICATION

SURFACE MOUNT

DUAL, IN SERIES

SILICON SWITCHING DIODES

www.centralsemi.com

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPD7000E is

an Enhanced version of the CMPD7000 Dual, Series

Configuration, Ultra-High Speed Switching Diode. This

device is manufactured by the epitaxial planar process,

in an epoxy molded surface mount SOT-23 package,

designed for high speed switching applications.

MARKING CODE: C5CE

FEATURED ENHANCED SPECIFICATIONS:

♦ BV from 100V min to 120V min.

SOT-23 CASE

♦ V from 1.1V max to 1.0V max.

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

♦

Peak Repetitive Reverse Voltage

Average Forward Current

Peak Forward Current

120

200

RRM

500

Power Dissipation

350

°C

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +150

357

stg

°C/W

ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)

SYMBOL TEST CONDITIONS

MIN

TYP

MAX

300

100

500

UNITS

μA

V =50V

V =50V, T =125°C

V =100V

I =100µA

120

0.55

0.67

0.85

150

0.59

0.72

0.91

1.5

♦

♦^V

I =1.0mA

0.65

0.77

1.0

♦

I =10mA

♦

I =100mA

V =0, f=1.0MHz

2.6

I =I =10mA, R =100Ω, Rec. to 1.0mA

2.0

4.0

♦ Enhanced Specification

R4 (27-January 2010)

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