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CMP3007F5

更新时间: 2024-11-21 17:15:39
品牌 Logo 应用领域
应能微 - APPLIED POWER /
页数 文件大小 规格书
5页 1302K
描述
DFN5x6

CMP3007F5 数据手册

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CMP3007F5  
P-Channel 30V (D-S) Power MOSFET  
Description  
Applications  
The CMP3007F5 is the P-Channel enhancement mode  
power field effect transistors with high cell density, trench  
technology. This high density process and design have  
been optimized switching performance and especially tai-  
lored to minimize on-state resistance.  
Battery management  
Power management  
Load switch  
Marking Information  
Features  
VDS: -30V  
ID: -58A  
Marking Code = CMP3007F5  
Date Code = XXXX  
RDSON (@VGS=-10V) : < 8mΩ  
RDSON (@VGS=-4.5V) : < 12mΩ  
High density cell design for extremely low RDSON  
Excellent on-resistance and DC current capability  
P3007F5  
XXXX  
Equivalent Circuit and Pin Configuration  
Ordering Information  
Top View  
Bottom View  
Part Number  
Packaging  
5000/Tape & Reel  
Reel Size  
CMP3007F5  
13 inch  
Absolute Maximum Ratings (TA=25 unless otherwise noted)  
Parameter  
Symbol  
Maximum  
Unit  
V
Drain-source Voltage  
Gate-source Voltage  
VDS  
-30  
VGS  
V
±20  
-58  
TC=25°C  
TC=100°C  
TA=25°C  
TA=100°C  
A
ID  
-37  
A
Drain Current(1)(6)  
-15  
A
ID  
-10  
A
Pulsed Drain Current(3)  
IDM  
-232  
A
TC=25°C  
TA=25°C  
60  
4.1  
W
W
Total Power Dissipation(4)  
PD  
Thermal Resistance Junction-to-Ambient(2)(5)  
Thermal Resistance Junction-to-Case  
Junction and Storage Temperature Range  
RθJA  
RθJC  
30  
°C/W  
°C/W  
°C  
2.1  
TJ,TSTG  
-55 to +150  
Mar. 2022, Rev. 1.0  
1 of 5  
www.appliedpowermicro.com  

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