Datasheet > CMP10080GU

CMP10080GU

更新时间： 2024-09-14 17:15:35

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
5页	1346K
描述
TO-252

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CMP10080GU 数据手册

CMP10080GU

P-Channel 100V (D-S) Power MOSFET

Description

Applications

The CMP10080GU is the P-Channel enhancement mode

power field effect transistors with high cell density, trench

technology. This high density process and design have

been optimized switching performance and especially tai-

lored to minimize on-state resistance.



Cellular Handsets and Accessories

Personal Digital Assistants

Portable Instrumentation

Load switch

Marking Information

P10080GU

Features



VDS: -100V

ID: -18.5A

Marking Code = CMP10080GU

Date Code = XXXX

RDS_ON(@VGS=-10V) : < 110mΩ

RDS_ON(@VGS=-4.5V) : < 120mΩ

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

Equivalent Circuit and Pin Configuration

Ordering Information

TO-252

Part Number

Packaging

Remark

CMP10080GU 2500/Tape & Reel

ROHS

Absolute Maximum Ratings (TC=25 ℃ unless otherwise noted)

Parameter

Symbol

VDS

Maximum

-100

Unit

Drain-source Voltage

Gate-source Voltage

VGS

±20

TC=25°C

-18.5

-11.7

-74

Continuous Drain Current

TC=100°C

Pulsed Drain Current ⁽¹⁾

Avalanche Current⁽²⁾

IDM

IAS

-30

Avalanche energy⁽²⁾L=0.1mH

EAS

PD @TC=25°C

Total Power Dissipation ⁽³⁾

Derating Factor

above 25°C

0.6

W/°C

Thermal Resistance Junction-to-Case ⁽³⁾

RθJC

1.67

°C/W

°C

Junction and Storage Temperature Range

TJ,TSTG

-55 to +150

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