Datasheet > CMN3026S8D

CMN3026S8D

更新时间： 2024-11-21 17:15:39

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
5页	719K
描述
SO-8

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CMN3026S8D 数据手册

Preliminary CMN3026S8D

N-Channel 30V (D-S) Power MOSFET

Description

Applications

The CMN3026S8D is the N-Channel enhancement mode

power field effect transistors with high cell density, trench

technology. This high density process and design have

been optimized switching performance and especially tai-

lored to minimize on-state resistance.

•

Cellular Handsets and Accessories

Personal Digital Assistants

Portable Instrumentation

Load switch

Marking Information

Features

•

VDS: 30V

ID: 5.8A

Marking Code = 3026S8D

Date Code = XXXX

3026S8D

XXXX

RDS_ON(@VGS= 10V) : < 35mΩ

RDS_ON(@VGS= 4.5V) : < 53mΩ

High density cell design for extremely low RDS_ON

•

Excellent on-resistance and DC current capability

Equivalent Circuit and Pin Configuration

Ordering Information

SO-8

Part Number

Packaging

Reel Size

CMN3026S8D 2500/Tape & Reel

13 inch

Absolute Maximum Ratings (TA=25 ℃ unless otherwise noted)

Parameter

Symbol

VDS

Maximum

Unit

Drain-source Voltage

Gate-source Voltage

±20

VGS

TA=25°C

TA=70°C

5.8

Continuous Drain Current

Pulsed Drain Current ⁽¹⁾

4.6

IDM

23.2

Total Power Dissipation @ TA=25°C ⁽²⁾

Thermal Resistance Junction-to-Ambient ⁽²⁾

RθJA

62.5

-55 to +150

°C/W

°C

Junction and Storage Temperature Range

TJ,TSTG

May. 2021, Rev. 0.0

1 of 5

www.appliedpowermicro.com

12 3 4 5

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