Datasheet > CMN3022S8D

CMN3022S8D

更新时间： 2024-11-21 17:15:35

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
5页	1269K
描述
SO-8

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CMN3022S8D 数据手册

CMN3022S8D

N Channel 30V (D-S) Power MOSFET

Description

Applications

CMN3022S8D is the N-Channel enhancement mode pow-

er field effect transistors with high cell density, trench tech-

nology. This high density process and design have been

optimized switching performance and especially tailored to

minimize on-state resistance.



Cellular Handsets and Accessories

Personal Digital Assistants

Portable Instrumentation

Load switch

Marking Information

Features



VDS: 30V

Marking Code = 3022S8D

Date Code = XXXX

ID: 7.2A

3022S8D

RDS_ON(@VGS=10V) : < 24mΩ

RDS_ON(@VGS=4.5V) : < 30mΩ

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

Ordering Information

Equivalent Circuit and Pin Configuration

Part Number

Packaging

Reel Size

CMN3022S8D 4000/Tape & Reel

13 inch

Absolute Maximum Ratings (TA=25 ℃ unless otherwise noted)

Parameter

Symbol

Maximum

Unit

Drain-source Voltage

Gate-source Voltage

VDS

VGS

±20

TA=25°C

TA=70°C

7.2

Continuous Drain Current

Pulsed Drain Current⁽¹⁾

5.8

IDM

Total Power Dissipation @ TA=25°C ⁽²⁾

Thermal Resistance Junction-to-Ambient ⁽²⁾

Junction and Storage Temperature Range

RθJA

62.5

°C/W

°C

TJ,TSTG

-55 to +150

Sep. 2021, Rev. 0.1

1 of 5

www.appliedpowermicro.com

12 3 4 5

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