Datasheet > CMM1331-KU

CMM1331-KU

更新时间： 2024-12-01 06:48:11

品牌	Logo	应用领域
其他 - ETC		放大器功率放大器
页数	文件大小	规格书
2页	375K
描述
12.70 to 13.50 GHz 1.5 Watt Power Amplifier

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

CMM1331-KU 数据手册

CMM1331-KU

Advanced Product Specifications

12.70 to 13.50 GHz

1.5 Watt Power Amplifier

October 2003

(1 of 2)

Features

Pin Functional Diagram

❏ 32.5 dBm (Typ.) Saturated Output Power

❏ 32.0 dB (Typ.) Linear Gain

❏ Fully Matched

❏ Unconditionally Stable

Vdd 1

10 Vdd

GROUND 2

9 GROUND

❏ Copper/Molybdenum Flange Package

for Optimum Thermal Dissipation

RF IN 3

8 RF OUT

7 GROUND

6 Vgg

GROUND 4

Vgg 5

Applications

❏ Ku-Band VSAT Transmit Subsystems

Description

The unconditional stability and internal matching

provides for reduction of external components making this

product a simple and low-cost solution. The package is

designed with a base material of gold-plated copper/molybde-

num composite that offers excellent thermal properties and

minimum mechanical stress.

The CMM1331-KU is a four-stage pHEMT GaAs

MMIC power amplifier that is ideally suited for transmit

subsystems designed for Ku-Band VSAT applications. The

CMM1331-KU provides 32.0 dB linear gain and delivers

1.5 watts of output power at saturation operating from

12.70 to 13.50 GHz frequency.

Electrical Characteristics (T = +25°C, Vd = 7V, Idq = 770mA)

Parameter

Condition

Min

12.70

32.0

Typ

Max

Units

GHz

dBm

Frequency Range

Saturated Output Power

13.50

Pin = 3.0 dBm

32.5

0.3

32.0

2.5

-10.0

-7.0

-0.9

940

27.0

Saturated Output Power Variation Over operating frequency

Linear Gain

0.6

35.0

4.5

29.0

Linear Gain Variation

Input Reflection Coefficient

Output Reflection Coefficient

Gate Supply Voltage

Drain Current

Over operating frequency

Idq = 770 mA

At Saturation

-1.1

-0.7

1000

Volts

Power Added Efficiency

Thermal Resistance

23.0

Channel to Backside

°C/W

Electrical Characteristics (T = -40°C to +70°C, Vd = 7V, Idq = 770mA)

Parameter

Condition

Min

-0.5

-2.5

Typ

Max

Units

dBm

Saturated Power Output

Linear Gain Variation

Stability

Variation from room temperature value

3.5

Unconditionally Stable

—

Maximum Ratings (TA = -40°C to +70°C) Operation outside any of these limits can cause permanent damage.

Parameter

Rating

Units

Parameter

Rating

Units

Drain Voltage (+V

)

8.5

Volts

RF Input Power (P )

7.0

dBm

)

Gate Voltage (V

-3.0

1000

Storage Temperature

Channel Temperature

Dissipated Power (P

-50 to +150 °C

175

7.3

)

Bias Current (I

°C

Watts

Gate Current (I )

)

dis

3236 Scott Boulevard

Santa Clara, California 95054

Phone: (408) 986-5060

Fax: (408) 986-5095

中文翻译

下载PDF

与CMM1331-KU相关器件

型号	品牌	获取价格	描述	数据表
CMM1331-SM	MIMIX	获取价格	12.7 to 13.5 GHz 1.5 Watt Power Amplifier
CMM1333-AK-000T	MIMIX	获取价格	Narrow Band Medium Power Amplifier, 1850MHz Min, 1910MHz Max,
CMM1333-AK-00ST	MIMIX	获取价格	Narrow Band Medium Power Amplifier, 1850MHz Min, 1910MHz Max, SO-8
CMM1333-AK-00T0	MIMIX	获取价格	Narrow Band Medium Power Amplifier, 1850MHz Min, 1910MHz Max, SO-8
CMM1335-AK	MIMIX	获取价格	Narrow Band Medium Power Amplifier, 1850MHz Min, 1910MHz Max,
CMM1335-AK-000T	MIMIX	获取价格	Narrow Band Medium Power Amplifier, 1850MHz Min, 1910MHz Max,
CMM1335-AK-00S0	MIMIX	获取价格	Narrow Band Medium Power Amplifier, 1850MHz Min, 1910MHz Max, SO-8
CMM1335-AK-00ST	MIMIX	获取价格	Narrow Band Medium Power Amplifier, 1850MHz Min, 1910MHz Max, SO-8
CMM1335-AK-00TT	MIMIX	获取价格	Narrow Band Medium Power Amplifier, 1850MHz Min, 1910MHz Max, SO-8
CMM14-22SD25S32	WINCHESTER	获取价格	D Microminiature Connector, 14 Contact(s), Female, Solder Terminal

与CMM1331-KU相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

53
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

42
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

70
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

66

产品中心

服务支持

精选活动

关于我们

帮助中心

CMM1331-KU

CMM1331-KU 数据手册

与CMM1331-KU相关器件

与CMM1331-KU相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

CMM1331-KU

CMM1331-KU 数据手册

与CMM1331-KU相关器件

与CMM1331-KU相关文章

您还可以找

您在本页遇到什么问题？