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CMM1321-AK-000T PDF预览

CMM1321-AK-000T

更新时间: 2024-11-30 22:05:35
品牌 Logo 应用领域
其他 - ETC 放大器射频微波功率放大器过程控制系统PCS
页数 文件大小 规格书
5页 107K
描述
1.85 to 1.91 GHz 5V, 28.5 dBm, PCS Power Amplifier

CMM1321-AK-000T 数据手册

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CMM1321  
P re lim in a ry P ro d u c t In fo rm a t io n  
1.85 to 1.91 GHz  
5V, 28.5 dBm, PCS  
Power Amplifier  
No ve m b e r 1 9 9 6  
(1 of 5)  
Features  
30% Linear Power Added Efficiency  
Functional Block Diagram  
28.5 dBm Output Power  
(ANSI J-STD-018 CDMA)  
24 dB Gain  
Tested Under Digital Modulation  
Low Cost SO-8 Surface Mount Package  
V
V
4
3
5 RF OUT/V  
g2  
d2  
6 RF OUT/V  
d2  
g1  
7 V  
GND 2  
d1  
Applications  
PCS Handsets  
8 N/C  
RF IN 1  
PCS Base Stations  
Back plane is ground and  
must be soldered to thermally  
conductive ground plane.  
Wireless Local Loop Subscriber Units  
1.6 GHz Satellite Subscriber Units  
The CMM1321 is packaged in a low-cost, space effi-  
cient SO-8 power package that gives excellent electrical stabili-  
Description  
The CMM1321 is a 5 V linear power amplifier  
intended for use in PCS handsets, wireless local loop sub-  
scriber units and PCS base stations. The CMM1321 offers  
maximum performance and flexibility. The amplifier is  
designed to support the requirements of PCS CDMA (ANSI  
J-STD-018) systems.  
ty and thermal handling performance with a R of less than  
Θ
18° C/W. The part is designed to require minimal external cir-  
cuitry for bias and matching, simplifying design and keeping  
board space and cost to a minimum. Through matching adjust-  
ment, equivalent performance can also be achieved for the 1.93  
to 1.99 GHz PCS bands as well as the 1.6 GHz satellite bands.  
Absolute Maximum Ratings  
Parameter  
Rating  
Parameter  
Rating  
Parameter  
Rating  
Drain Voltage (+V )  
+9.0 V*  
1.8 A  
+15 dBm*  
-4.0 V*  
Power Dissipation  
Thermal Resistance  
Storage Temperature  
5 W  
18°C/W  
-65°C to +150°C  
Operating Temperature  
Channel Temperature  
Soldering Temperature  
-40°C to +100°C  
175°C  
260°C for 5 Sec.  
d
Drain Current (I )  
d
RF Input Power  
DC Gate Voltage (-V )  
g
* Max (+V ) and (-V ) under linear operation. Max potential difference across the device in RF compression (2V + |-V |) not to exceed the minimum breakdown voltage (V ) of +18V.  
br  
d
g
d
g
Recommended Operating Conditions  
Parameter  
Typ  
Units  
Parameter  
Typ  
Units  
Drain Voltage (+V )  
d
4.5 to 5.1  
Volts  
Operating Temperature (PC Board)  
-30 to +80  
°C  
Electrical Characteristics  
Unless otherwise specified, the following specifications are guaranteed at room temperature with drain voltage (+V ) = 4.8 V in Celeritek test fixture.  
d
Parameter  
Condition  
Min  
1.85  
22  
Typ  
Max  
Units  
GHz  
dB  
dBm  
dBc  
dBc  
dB  
dB  
%
mA  
Frequency Range  
Gain  
Power Output  
Harmonics  
1.91  
@ Digital power output  
24  
28.5  
-35  
-40  
4.5  
10  
Meets J-STD-018 CDMA mask  
2nd @ Digital power output  
3rd @ Digital power output  
28.0  
-30  
-35  
5.0  
Noise Figure  
Return Loss  
Efficiency  
Pout CDMA  
Pout CDMA  
27  
30  
500  
Positive Supply Current (I )  
d
Quiescent Current (I )  
q
No RF  
250  
0.5  
mA  
mA  
V
Negative Supply Current (-I )  
g
1.0  
Negative Supply Voltage (-V )  
g
-1.3  
-1.7  
-2.2  
3236 Scott Boulevard  
Santa Clara, California 95054  
Phone: (408) 986-5060  
Fax: (408) 986-5095  

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