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CMLT5088EMTRPBFREE PDF预览

CMLT5088EMTRPBFREE

更新时间: 2024-11-02 09:13:35
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
2页 679K
描述
Transistor,

CMLT5088EMTRPBFREE 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.61最大集电极电流 (IC):0.1 A
最小直流电流增益 (hFE):300最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):0.35 W
子类别:Other Transistors表面贴装:YES
标称过渡频率 (fT):100 MHzBase Number Matches:1

CMLT5088EMTRPBFREE 数据手册

 浏览型号CMLT5088EMTRPBFREE的Datasheet PDF文件第2页 
CMLT5088EM  
www.centralsemi.com  
SURFACE MOUNT  
DUAL, MATCHED  
NPN SILICON TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMLT5088EM  
consists of two individual, isolated 5088E NPN silicon  
transistors with matched V  
This device is designed for applications requiring high  
gain and low noise.  
characteristics.  
BE(ON)  
MARKING CODE: 88M  
FEATURES:  
• Transistor pair matched for V  
SOT-563 CASE  
BE(ON)  
• Device is Halogen Free by design  
MAXIMUM RATINGS: (T =25°C)  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Power Dissipation  
SYMBOL  
UNITS  
V
V
A
V
V
V
50  
50  
5.0  
100  
350  
CBO  
CEO  
EBO  
V
I
mA  
mW  
°C  
C
P
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
357  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
50  
50  
UNITS  
nA  
nA  
V
V
V
mV  
mV  
mV  
I
I
V
V
=20V  
=3.0V  
CBO  
EBO  
CBO  
CEO  
CB  
EB  
BV  
BV  
BV  
V
V
V
h
h
h
h
I =100μA  
50  
50  
5.0  
135  
65  
8.7  
C
I =1.0mA  
C
I =100μA  
EBO  
E
I =10mA, I =1.0mA  
45  
100  
400  
800  
900  
CE(SAT)  
CE(SAT)  
BE(SAT)  
FE  
FE  
FE  
C
B
B
B
C
I =100mA, I =10mA  
110  
700  
430  
435  
430  
125  
C
I =10mA, I =1.0mA  
C
V
=5.0V, I =0.1mA  
300  
300  
300  
50  
CE  
CE  
CE  
CE  
CE  
CB  
BE  
CE  
CE  
V
V
V
V
V
V
V
V
=5.0V, I =1.0mA  
C
=5.0V, I =10mA  
C
=5.0V, I =100mA  
FE  
C
f
C
C
=5.0V, I =500μA, f=20MHz  
100  
MHz  
pF  
pF  
T
C
=5.0V, I =0, f=1.0MHz  
4.0  
15  
1400  
ob  
ib  
fe  
E
=0.5V, I =0, f=1.0MHz  
C
h
=5.0V, I =1.0mA, f=1.0kHz  
350  
C
NF  
=5.0V, I =100μA, R =10kΩ  
C S  
f=10Hz to 15.7kHz  
3.0  
dB  
MATCHING CHARACTERISTICS:  
SYMBOL TEST CONDITIONS  
MIN  
MAX  
10  
10  
10  
10  
UNITS  
mV  
mV  
mV  
mV  
|V  
|V  
|V  
|V  
-V  
|
|
|
|
V
V
V
V
=5.0V, I =1.0μA  
BE1 BE2  
CE  
CE  
CE  
CE  
C
-V  
BE1 BE2  
=5.0V, I =5.0μA  
C
-V  
=5.0V, I =10μA  
BE1 BE2  
C
-V  
BE1 BE2  
=5.0V, I =100μA  
C
R1 (20-January 2010)  

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