Datasheet > CMLT5088EMTIN/LEAD

CMLT5088EMTIN/LEAD

更新时间： 2024-11-02 10:09:19

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
3页	601K
描述
Small Signal Bipolar Transistor,

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CMLT5088EMTIN/LEAD 数据手册

CMLT5088EM

www.centralsemi.com

SURFACE MOUNT SILICON

DUAL, MATCHED

DESCRIPTION:

NPN TRANSISTOR

The CENTRAL SEMICONDUCTOR CMLT5088EM

consists of two individual, isolated 5088E NPN silicon

transistors with matched V

This device is designed for applications requiring high

gain and low noise.

characteristics.

BE(ON)

MARKING CODE: 88M

FEATURES:

• Transistor pair matched for V

SOT-563 CASE

BE(ON)

• Device is Halogen Free by design

MAXIMUM RATINGS: (T =25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

SYMBOL

UNITS

5.0

100

350

CBO

CEO

EBO

°C

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +150

357

stg

°C/W

ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

=20V

=3.0V

CBO

EBO

CBO

CEO

I =100μA

5.0

135

8.7

110

700

430

435

430

125

I =1.0mA

I =100μA

EBO

I =10mA, I =1.0mA

100

400

800

900

CE(SAT)

BE(SAT)

I =100mA, I =10mA

I =10mA, I =1.0mA

=5.0V, I =0.1mA

300

=5.0V, I =1.0mA

=5.0V, I =10mA

=5.0V, I =100mA

=5.0V, I =500μA, f=20MHz

100

MHz

=5.0V, I =0, f=1.0MHz

4.0

1400

=0.5V, I =0, f=1.0MHz

=5.0V, I =1.0mA, f=1.0kHz

350

=5.0V, I =100μA, R =10kΩ

C S

f=10Hz to 15.7kHz

3.0

MATCHING CHARACTERISTICS:

SYMBOL TEST CONDITIONS

MIN

MAX

UNITS

-V

=5.0V, I =1.0μA

BE1 BE2

-V

BE1 BE2

=5.0V, I =5.0μA

-V

=5.0V, I =10μA

BE1 BE2

-V

BE1 BE2

=5.0V, I =100μA

R3 (29-June 2015)

12 3

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