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CMLDM7003JE PDF预览

CMLDM7003JE

更新时间： 2024-11-19 09:27:27
品牌 Logo 应用领域
CENTRAL 晶体小信号场效应晶体管
页数 文件大小 规格书
2页 521K
描述
SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

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中文翻译

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CMLDM7003JE 技术参数

是否无铅：含铅生命周期：Active
包装说明：,针数：6
Reach Compliance Code：compliant风险等级：5.55
Is Samacsys：NBase Number Matches：1

CMLDM7003JE 数据手册

 浏览型号CMLDM7003JE的Datasheet PDF文件第2页 
CMLDM7003E  
CMLDM7003JE  
ENHANCED SPECIFICATION  
www.centralsemi.com  
SURFACE MOUNT  
DUAL N-CHANNEL  
ENHANCEMENT-MODE  
SILICON MOSFET  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMLDM7003E  
and CMLDM7003JE are Enhancement-mode  
N-Channel Field Effect Transistors, manufactured  
by the N-Channel DMOS Process, designed for high  
speed pulsed amplifier and driver applications. The  
CMLDM7003E utilizes the USA pinout configuration,  
while the CMLDM7003JE utilizes the Japanese pinout  
configuration. These special Dual Transistor devices  
offer low drain-source on state resistance (r  
and ESD protection up to 2kV.  
)
DS(ON)  
SOT-563 CASE  
MARKING CODES: CMLDM7003E: C73  
CMLDM7003JE: C7J  
FEATURES  
• ESD protected up to 2kV  
MAXIMUM RATINGS: (T =25°C)  
Drain-Source Voltage  
Drain-Gate Voltage  
Gate-Source Voltage  
Continuous Drain Current  
Maximum Pulsed Drain Current  
Power Dissipation (Note 1)  
Power Dissipation (Note 2)  
Power Dissipation (Note 3)  
Operating and Storage Junction Temperature  
SYMBOL  
UNITS  
V
V
V
mA  
A
mW  
mW  
mW  
°C  
A
V
V
V
50  
50  
12  
280  
1.5  
350  
300  
150  
DS  
DG  
GS  
I
D
I
DM  
P
P
P
D
D
D
T , T  
-65 to +150  
J
stg  
Thermal Resistance  
Θ
357  
°C/W  
JA  
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
50  
0.5  
1.0  
50  
UNITS  
nA  
μA  
μA  
nA  
V
V
V
Ω
Ω
I
I
I
I
I
I
I
V
V
V
V
V
V
V
V
V
V
V
V
V
V
=5.0V  
=10V  
=12V  
♦
♦
♦
GSSF, GSSR  
GS  
GS  
GS  
DS  
GS  
GSSF, GSSR  
GSSF, GSSR  
=50V, V =0  
DSS  
GS  
BV  
V
V
=0, I =10μA  
50  
0.49  
DSS  
GS(th)  
SD  
D
=V , I =250μA  
1.2  
1.4  
2.3  
1.9  
1.5  
DS GS  
D
=0, I =115mA  
S
GS  
GS  
GS  
GS  
DS  
DS  
DS  
DS  
♦ r  
=1.8V, I =50mA  
D
1.6  
1.3  
1.1  
DS(ON)  
DS(ON)  
DS(ON)  
FS  
rss  
iss  
♦
r
=2.5V, I =50mA  
D
♦ r  
=5.0V, I =50mA  
D
Ω
g
=10V, I =200mA  
200  
mS  
pF  
pF  
pF  
D
C
C
C
=25V, V =0, f=1.0MHz  
GS  
5.0  
50  
25  
=25V, V =0, f=1.0MHz  
GS  
=25V, V =0, f=1.0MHz  
GS  
oss  
♦ Enhanced specification  
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2  
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2  
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2  
R2 (18-January 2010)  
12

中文翻译

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