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CMKT3946TRPBFREE PDF预览

CMKT3946TRPBFREE

更新时间: 2024-11-26 13:00:59
品牌 Logo 应用领域
CENTRAL 晶体开关晶体管
页数 文件大小 规格书
2页 429K
描述
Small Signal Bipolar Transistor, 0.2A I(C), NPN and PNP,

CMKT3946TRPBFREE 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.8
最大集电极电流 (IC):0.2 A最小直流电流增益 (hFE):100
最高工作温度:150 °C极性/信道类型:NPN/PNP
最大功率耗散 (Abs):0.35 W子类别:BIP General Purpose Small Signal
表面贴装:YES标称过渡频率 (fT):250 MHz
Base Number Matches:1

CMKT3946TRPBFREE 数据手册

 浏览型号CMKT3946TRPBFREE的Datasheet PDF文件第2页 
CMKT3904 NPN/NPN  
CMKT3906 PNP/PNP  
CMKT3946 NPN/PNP  
www.centralsemi.com  
SURFACE MOUNT  
DUAL SMALL SIGNAL SILICON  
SWITCHING TRANSISTORS  
DESCRIPTION:  
The Central Semiconductor CMKT3904 (two single  
NPN), CMKT3906 (two single PNP), and CMKT3946  
(one each NPN and PNP complementary) are  
combinations of transistors in a space saving  
SOT-363 ULTRAmini™ package, designed for  
small signal general purpose amplifier and switching  
applications.  
CMKT3904 MARKING CODE: K04  
CMKT3906 MARKING CODE: K06  
CMKT3946 MARKING CODE: K46  
SOT-363 CASE  
FEATURES:  
• ULTRAmini™ space saving package  
• Two NPN (3904) or Two PNP (3906)  
Transistors in a single package  
• One NPN (3904) and one PNP (3906)  
complementary Transistor in a single package  
MAXIMUM RATINGS: (T =25°C)  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Power Dissipation  
SYMBOL  
NPN  
60  
40  
PNP  
40  
40  
UNITS  
V
V
A
V
V
V
CBO  
CEO  
EBO  
6.0  
5.0  
V
I
200  
350  
mA  
mW  
°C  
C
P
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
stg  
-65 to +150  
357  
J
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)  
A
NPN  
PNP  
MIN  
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
MAX  
UNITS  
I
V
=30V, V =3.0V  
-
50  
-
50  
nA  
CEV  
BL  
CE  
CE  
EB  
I
V
=30V, V =3.0V  
EB  
-
50  
-
-
nA  
nA  
nA  
nA  
V
BV  
BV  
BV  
I =10μA  
60  
40  
6.0  
-
-
40  
40  
5.0  
-
-
CBO  
CEO  
C
I =1.0mA  
-
-
-
C
I =10μA  
-
0.25  
0.40  
0.85  
0.95  
-
EBO  
E
V
V
V
V
I =10mA, I =1.0mA  
0.20  
0.30  
0.85  
0.95  
-
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(SAT)  
FE  
C
B
I =50mA, I =5.0mA  
-
-
V
C
B
I =10mA, I =1.0mA  
0.65  
-
0.65  
-
V
C
B
I =50mA, I =5.0mA  
V
C
B
h
h
h
h
h
V
=1.0V, I =0.1mA  
40  
70  
100  
60  
30  
300  
-
60  
80  
100  
60  
30  
250  
-
CE  
CE  
CE  
CE  
CE  
C
V
V
V
V
=1.0V, I =1.0mA  
-
-
FE  
C
=1.0V, I =10mA  
300  
-
300  
-
FE  
C
=1.0V, I =50mA  
FE  
C
=1.0V, I =100mA  
-
-
FE  
C
f
V
=20V, I =10mA, f=100MHz  
-
-
MHz  
pF  
T
CE  
C
C
V
=5.0V, I =0, f=1.0MHz  
4.0  
8.0  
4.5  
10  
ob  
CB  
E
C
V
=0.5V, I =0, f=1.0MHz  
-
-
pF  
ib  
BE  
C
R4 (13-January 2010)  

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