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CMKSH2-4LRLEADFREE PDF预览

CMKSH2-4LRLEADFREE

更新时间: 2024-09-24 13:06:59
品牌 Logo 应用领域
CENTRAL 整流二极管肖特基二极管测试光电二极管
页数 文件大小 规格书
2页 130K
描述
Rectifier Diode, Schottky, 3 Element, 0.2A, 40V V(RRM), Silicon, PLASTIC, ULTRAMINI-6

CMKSH2-4LRLEADFREE 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:PLASTIC, ULTRAMINI-6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.7外壳连接:ISOLATED
配置:SEPARATE, 3 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:3端子数量:6
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:0.2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大功率耗散:0.35 W
认证状态:Not Qualified最大重复峰值反向电压:40 V
最大反向恢复时间:0.005 µs表面贴装:YES
技术:SCHOTTKY端子面层:MATTE TIN (315)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10Base Number Matches:1

CMKSH2-4LRLEADFREE 数据手册

 浏览型号CMKSH2-4LRLEADFREE的Datasheet PDF文件第2页 
TM  
CMKSH2-4LR  
Central  
Semiconductor Corp.  
SURFACE MOUNT  
TM  
ULTRAmini  
TRIPLE ISOLATED  
SILICON LOW V SCHOTTKY DIODES  
F
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMKSH2-4LR  
type contains three (3) Isolated Silicon Low V  
F
Schottky Diodes, epoxy molded in a SOT-363  
TM  
surface mount package. This ULTRAmini device  
has been designed for switching applications  
requiring a low forward voltage drop.  
MARKING CODE: CHTL  
SOT-363 CASE  
MAXIMUM RATINGS: (T =25°C)  
A
SYMBOL  
UNITS  
Peak Repetitive Reverse Voltage  
Continuous Forward Current  
Peak Repetitive Forward Current  
Forward Surge Current, tp=10ms  
Power Dissipation  
V
40  
V
RRM  
I
200  
350  
1.0  
mA  
mA  
A
F
I
I
FRM  
FSM  
P
350  
mW  
D
Operating and Storage  
Junction Temperature  
Thermal Resistance  
T , T  
stg  
-65 to +150  
357  
°C  
°C/W  
J
Θ
JA  
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
V =20V  
MIN  
TYP  
MAX  
UNITS  
I
11  
53  
0.24  
0.35  
0.42  
8.5  
50  
µA  
V
V
V
V
pF  
ns  
R
R
BV  
I =100µA  
40  
R
R
V
V
V
I =10mA  
0.325  
0.4  
0.5  
10  
5.0  
F
F
F
F
I =100mA  
F
I =200mA  
F
C
V =4.0V, f=1.0 MHz  
T
R
t
I =I =10mA, I =1.0mA, R =100Ω  
rr  
4.0  
rr  
F
R
L
R0 (13-January 2005)  

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