Datasheet > CMKDM8005_13

CMKDM8005_13

更新时间： 2024-09-10 12:55:51

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
3页	945K
描述
SURFACE MOUNT SILICON DUAL P-CHANNEL ENHANCEMENT-MODE MOSFET

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中文翻译

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数据手册

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CMKDM8005_13 数据手册

CMKDM8005

SURFACE MOUNT SILICON

DUAL P-CHANNEL

ENHANCEMENT-MODE

MOSFET

www.centralsemi.com

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMKDM8005

consists of dual P-Channel enhancement-mode silicon

MOSFETs designed for high speed pulsed amplifier

and driver applications. These MOSFETs offer very low

and low threshold voltage.

DS(ON)

MARKING CODE: C85M

FEATURES:

SOT-363 CASE

• ESD protection up to 1800V (Human Body Model)

• 350mW power dissipation

APPLICATIONS:

• Load switch/Level shifting

• Battery charging

• Very low r

DS(ON)

• Low threshold voltage

• Logic level compatible

• Boost switch

• Electro-luminescent backlighting

• Small, SOT-363 surface mount package

MAXIMUM RATINGS: (T =25°C)

Drain-Source Voltage

SYMBOL

UNITS

8.0

Gate-Source Voltage

Continuous Drain Current (Steady State)

Continuous Source Current (Body Diode)

Maximum Pulsed Drain Current

Power Dissipation

650

250

1.0

350

°C

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +150

357

stg

°C/W

ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

, I

=4.5V, V =0

μA

GSSF GSSR

=16V, V =0

100

DSS

=0, I =250μA

DSS

GS(th)

=V , I =250μA

DS GS

0.5

1.0

1.1

=0, I =250mA

=4.5V, I =350mA

0.25

0.37

0.36

0.5

DS(ON)

=2.5V, I =300mA

=1.8V, I =150mA

0.8

=10V, I =200mA

0.2

=16V, V =0, f=1.0MHz

100

rss

iss

oss

R3 (3-June 2013)

12 3

中文翻译

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