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CMFD2004IBKPBFREE PDF预览

CMFD2004IBKPBFREE

更新时间: 2024-11-20 09:15:47
品牌 Logo 应用领域
CENTRAL 测试
页数 文件大小 规格书
2页 421K
描述
Diode,

CMFD2004IBKPBFREE 技术参数

是否Rohs认证: 符合生命周期:End Of Life
Reach Compliance Code:compliant风险等级:5.59
最大正向电压 (VF):1 V最高工作温度:150 °C
最低工作温度:-65 °C最大功率耗散:0.35 W
最大重复峰值反向电压:300 V最大反向电流:100 µA
最大反向恢复时间:0.05 µs反向测试电压:240 V
子类别:Other Diodes表面贴装:YES
Base Number Matches:1

CMFD2004IBKPBFREE 数据手册

 浏览型号CMFD2004IBKPBFREE的Datasheet PDF文件第2页 
CMFD2004i  
www.centralsemi.com  
SURFACE MOUNT  
DUAL ISOLATED HIGH VOLTAGE  
SILICON SWITCHING DIODES  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMFD2004i  
consists of two electrically Isolated high voltage  
switching diodes packaged in an epoxy molded  
SOT-143 surface mount case. This device is  
designed for switching applications requiring dual  
high voltage diodes.  
MARKING CODE: CJP  
SOT-143 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Continuous Reverse Voltage  
V
240  
300  
R
Peak Repetitive Reverse Voltage  
Peak Repetitive Reverse Current  
Continuous Forward Current  
V
V
RRM  
I
200  
mA  
mA  
mA  
A
O
I
225  
F
Peak Repetitive Forward Current  
Peak Forward Surge Current, tp=1.0μs  
Peak Forward Surge Current, tp=1.0s  
Power Dissipation  
I
450  
FRM  
I
4.0  
FSM  
FSM  
I
1.0  
A
P
350  
mW  
°C  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
357  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
V =240V  
MIN  
MAX  
100  
UNITS  
nA  
μA  
V
I
I
R
R
V =240V, T =150°C  
100  
R
R
A
BV  
I =100μA  
300  
R
R
V
I =100mA  
1.0  
5.0  
50  
V
F
F
C
V =0, f=1.0MHz  
pF  
T
R
t
I =I =30mA, I =3.0mA, R =100Ω  
ns  
rr  
F
R
rr  
L
R5 (13-August 2010)  

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