Datasheet > CMD41437TS8

CMD41437TS8

更新时间： 2024-10-01 17:15:27

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
8页	1440K
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CMD41437TS8 数据手册

CMD41437TS8

Dual N and P Channel 40V (D-S) Power MOSFET

Description

Applications

CMD41437TS8 is the Dual N and P-Channel enhance-

ment mode power field effect transistors with high cell den-

sity, trench technology. This high density process and de-

sign have been optimized switching performance and es-

pecially tailored to minimize on-state resistance.



Cellular Handsets and Accessories

Personal Digital Assistants

Portable Instrumentation

Load switch

Marking Information

Features



N-Channel VDS: 40V

N-Channel ID: 8.6A

Marking Code = D41437TS8

Date Code = XXXX

D41437TS8

N-Channel RDS_ON(@VGS=10V) : < 17mΩ

N-Channel RDS_ON(@VGS=4.5V) : < 25mΩ

P-Channel VDS: -40V

P-Channel ID: -5.2A

P-Channel RDS_ON(@VGS=-10V) : < 44mΩ

P-Channel RDS_ON(@VGS=-4.5V) : < 60mΩ

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

Ordering Information

Equivalent Circuit and Pin Configuration

Part Number

Packaging

Reel Size

CMD41437TS8 4000/Tape & Reel

13 inch

Absolute Maximum Ratings (TA=25 ℃ unless otherwise noted)

Maximum

Parameter

Symbol

Unit

N-Channel P-Channel

Drain-source Voltage

Gate-source Voltage

VDS

VGS

±20

8.6

5.4

-40

±20

-5.2

-3.3

-21

TA=25°C

Continuous Drain Current

Pulsed Drain Current⁽¹⁾

Total Power Dissipation @ TC=25°C ⁽²⁾

Thermal Resistance Junction-to-Ambient ⁽²⁾

Junction and Storage Temperature Range

TA=100°C

IDM

RθJA

62.5

°C/W

°C

TJ,TSTG

-55 to +150 -55 to +150

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