Datasheet > CMBSS138

CMBSS138

更新时间： 2024-06-26 08:51:36

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
5页	1256K
描述
SOT-23

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

CMBSS138 数据手册

CMBSS138

N-Channel 50V (D-S) Power MOSFET

Description

Applications

CMBSS138 is the N-Channel enhancement mode power

field effect transistors with high cell density, trench tech-

nology. This high density process and design have been

optimized switching performance and especially tailored to

minimize on-state resistance.



Cellular Handsets and Accessories

Personal Digital Assistants

Portable Instrumentation

Load switch

Marking Information

Features



VDS: 50V

Device Code = SS.

ID: 340mA

SS.



RDS_ON(@VGS=10V) : < 2.5Ω



RDS_ON(@VGS=4.5V) : < 3.0Ω

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

Equivalent Circuit and Pin Configuration

Ordering Information

SOT-23 (Top View)

Part Number

Packaging

3000/Tape & Reel

Reel Size

CMBSS138

7 inch

Absolute Maximum Ratings (TA=25 ℃ unless otherwise noted)

Parameter

Symbol

VDS

Maximum

Unit

Drain-source Voltage

Gate-source Voltage

VGS

±20

TA=25°C

TA=70°C

340

Continuous Drain Current

Pulsed Drain Current⁽¹⁾

272

IDM

1.5

Total Power Dissipation @ TA=25°C ⁽²⁾

Thermal Resistance Junction-to-Ambient ⁽²⁾

Junction and Storage Temperature Range

350

°C/W

°C

RθJA

357

TJ,TSTG

-55 to +150

Mar.2020, Rev. 0.0

1 of 5

www.appliedpowermicro.com

12 3 4 5

中文翻译

下载PDF

与CMBSS138相关器件

型号	品牌	获取价格	描述	数据表
CMBSS84	APPLIED POWER	获取价格	SOT-23
CMBT200	CDIL	获取价格	PNP EPITAXIAL PLANAR SILICON TRANSISTOR
CMBT200A	CDIL	获取价格	PNP EPITAXIAL PLANAR SILICON TRANSISTOR
CMBT2222	CDIL	获取价格	SILICON PLANAR EPITAXIAL TRANSISTORS
CMBT2222A	CDIL	获取价格	SILICON PLANAR EPITAXIAL TRANSISTORS
CMBT2222A	RECTRON	获取价格	SOT-23 - Power Transistor and Darlingtons
CMBT2222A-T	RECTRON	获取价格	暂无描述
CMBT2369	CDIL	获取价格	SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR
CMBT2484	CDIL	获取价格	NPN SILICON EPITAXIAL TRANSISTOR
CMBT2907	CDIL	获取价格	SILICON PLANAR EPITAXIAL TRANSISTORS