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CM800E2C-66H PDF预览

CM800E2C-66H

更新时间: 2024-10-14 03:25:55
品牌 Logo 应用领域
三菱 - MITSUBISHI 晶体晶体管双极性晶体管高压
页数 文件大小 规格书
4页 51K
描述
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

CM800E2C-66H 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:FLANGE MOUNT, R-XUFM-X9
Reach Compliance Code:unknown风险等级:5.24
外壳连接:ISOLATED最大集电极电流 (IC):800 A
集电极-发射极最大电压:3300 V配置:COMPLEX
门极-发射极最大电压:20 VJESD-30 代码:R-XUFM-X9
元件数量:2端子数量:9
最高工作温度:150 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):9600 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICONVCEsat-Max:4.94 V
Base Number Matches:1

CM800E2C-66H 数据手册

 浏览型号CM800E2C-66H的Datasheet PDF文件第2页浏览型号CM800E2C-66H的Datasheet PDF文件第3页浏览型号CM800E2C-66H的Datasheet PDF文件第4页 
MITSUBISHI HVIGBT MODULES  
CM800E2C-66H  
HIGH POWER SWITCHING USE  
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules  
INSULATED TYPE  
CM800E2C-66H  
IC...................................................................800A  
VCES ....................................................... 3300V  
Insulated Type  
1-elements in a pack (for brake)  
AISiC base plate  
APPLICATION  
DC choppers, Dynamic braking choppers.  
OUTLINE DRAWING & CIRCUIT DIAGRAM  
Dimensions in mm  
190  
171  
C
C
K (C)  
6 - M8 NUTS  
57±0.25  
57±0.25  
57±0.25  
C
G
E
C
C
C
E
E
A (E)  
CM  
E
E
E
CIRCUIT DIAGRAM  
E
G
C
20.25  
41.25  
8 - φ7MOUNTING HOLES  
3 - M4 NUTS  
79.4  
15  
61.5  
61.5  
40  
13  
5.2  
LABEL  
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)  
Mar. 2003  

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