Datasheet > CM65R030FZ

CM65R030FZ

更新时间： 2024-11-29 17:15:27

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
5页	1251K
描述
TO-247

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CM65R030FZ 数据手册

CM65R030FZ

N-Channel 650V (D-S) Power MOSFET

Description

Applications

The CM65R030FZ is the N-Channel enhancement mode

power field effect transistors with high cell density, high

voltage Super Junction technology. This high density pro-

cess and design have been optimized switching perfor-

mance and especially tailored to minimize on-state re-

sistance.



AC/DC load switch

SMPS

LED power

PC power

Telecom power

Server power

EV Charger

Features



Motor driver



VDS: 650V

Marking Information

ID (@VGS=10V): 83A

RDS_ON(@VGS=10V) : < 36mΩ

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

Marking Code = 65R030FZ

Date Code = XXXX

65R030FZ

XXXX

Equivalent Circuit and Pin Configuration

TO-247

Ordering Information

P/N

Package Type

TO-247

Packaging

CM65R030FZ

Tube

Absolute Maximum Ratings (Tc=25 ℃ unless otherwise noted)

Parameter

Symbol

Maximum

Unit

Drain-source Voltage

Gate-source Voltage

VDS

VGS

650

±30

Tc=25°C

Continuous Drain Current ⁽¹⁾

Pulsed Drain Current⁽²⁾

Tc=100°C

IDM

PD @ Tc=25°C

Derating Factor above 25°C

RθJC

330

595

Total Power Dissipation ⁽³⁾

4.76

0.021

W/°C

°C/W

°C

Thermal Resistance Junction-to-Case ⁽³⁾

Thermal Resistance Junction-to-Ambient ⁽³⁾

Junction and Storage Temperature Range

RθJA

TJ,TSTG

-55 to +150

Jun. 2023, Rev. 1.0

1 of 5

www.appliedpowermicro.com

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