5秒后页面跳转
CM50TF-24H PDF预览

CM50TF-24H

更新时间: 2024-11-08 22:08:23
品牌 Logo 应用领域
三菱 - MITSUBISHI 开关
页数 文件大小 规格书
4页 60K
描述
MEDIUM POWER SWITCHING USE INSULATED TYPE

CM50TF-24H 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:MODULE
包装说明:FLANGE MOUNT, R-XUFM-X19针数:19
Reach Compliance Code:unknown风险等级:5.82
其他特性:SUPER FAST RECOVERY外壳连接:ISOLATED
最大集电极电流 (IC):50 A集电极-发射极最大电压:1200 V
配置:BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE门极-发射极最大电压:20 V
JESD-30 代码:R-XUFM-X19元件数量:6
端子数量:19最高工作温度:150 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):400 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:MOTOR CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):500 ns标称接通时间 (ton):280 ns
VCEsat-Max:3.4 VBase Number Matches:1

CM50TF-24H 数据手册

 浏览型号CM50TF-24H的Datasheet PDF文件第2页浏览型号CM50TF-24H的Datasheet PDF文件第3页浏览型号CM50TF-24H的Datasheet PDF文件第4页 
MITSUBISHI IGBT MODULES  
CM50TF-24H  
MEDIUM POWER SWITCHING USE  
INSULATED TYPE  
A
C
X
S
X
Q
Q
X
N
Z - M4 THD  
(7 TYP.)  
GuP EuP  
GuN EuN  
GvP EvP  
GwP EwP  
GwN EwN  
P
P
K
GvN EvN  
P
G
J
B
D
G
N
R
U
V
W
E
N
T
U
N
Description:  
Mitsubishi IGBT Modules are de-  
signed for use in switching appli-  
cations. Each module consists of  
six IGBTs in a three phase bridge  
configuration, with each transistor  
having a reverse-connected super-  
fast recovery free-wheel diode. All  
components and interconnects are  
isolated from the heat sinking  
baseplate, offering simplified sys-  
tem assembly and thermal man-  
agement.  
Y DIA. (4 TYP.)  
M
M
AA  
L
AA  
L
TAB #110, t = 0.5  
V
F
H
AB  
P
Features:  
ٗ Low Drive Power  
GuP  
EuP  
GvP  
EvP  
GwP  
EwP  
P
ٗ Low V  
CE(sat)  
ٗ Discrete Super-Fast Recovery  
Free-Wheel Diode  
ٗ High Frequency Operation  
ٗ Isolated Baseplate for Easy  
N
GuN  
EuN  
GvN  
EvN  
GwN  
EwN  
U
W
V
Heat Sinking  
N
Applications:  
ٗ AC Motor Control  
ٗ Motion/Servo Control  
ٗ UPS  
ٗ Welding Power Supplies  
Outline Drawing and Circuit Diagram  
Dimensions  
Inches  
4.02±0.02  
3.58±0.02  
3.15±0.01  
2.913±0.01  
1.69  
Millimeters  
Dimensions  
Inches  
0.65  
Millimeters  
16.5  
14.0  
12.0  
11.0  
10.0  
8.5  
A
B
C
D
E
102.0±0.5  
91.0±0.5  
80.0±0.25  
74.0±0.25  
43.0  
P
Q
R
Ordering Information:  
0.55  
Example: Select the complete part  
module number you desire from  
the table below -i.e. CM50TF-24H  
0.47  
S
0.43  
is a 1200V (V  
Six-IGBT Module.  
), 50 Ampere  
T
0.39  
CES  
F
G
H
J
1.18 +0.06/-0.02 30 +1.5/-0.5  
U
0.33  
Type  
Current Rating  
V
CES  
1.18  
1.16  
1.06  
0.96  
0.87  
0.79  
0.67  
30.0  
29.5  
27.0  
24.5  
22.0  
20.0  
17.0  
V
0.32  
8.1  
Amperes  
Volts (x 50)  
X
0.24  
6.0  
CM  
50  
24  
Y
0.22 Dia.  
M4 Metric  
0.08  
Dia. 5.5  
M4  
K
L
Z
AA  
AB  
2.0  
M
N
0.28  
7.0  
Sep.1998  

与CM50TF-24H相关器件

型号 品牌 获取价格 描述 数据表
CM50TF-28H POWEREX

获取价格

Six-IGBT IGBTMOD 50 Amperes/1400 Volts
CM50TF-28H MITSUBISHI

获取价格

MEDIUM POWER SWITCHING USE INSULATED TYPE
CM50TJ-24F POWEREX

获取价格

Trench Gate Design Six IGBTMOD⑩ 50 Amperes/12
CM50TL-24NF MITSUBISHI

获取价格

IGBT MODULES HIGH POWER SWITCHING USE
CM50TL-24NF POWEREX

获取价格

Six IGBTMOD NF-Series Module 50 Amperes/1200 Volts
CM50TU-24F MITSUBISHI

获取价格

HIGH POWER SWITCHING USE
CM50TU-24F POWEREX

获取价格

Trench Gate Design Six IGBTMOD⑩ 50 Amperes/12
CM50TU-24F_09 MITSUBISHI

获取价格

IGBT MODULES HIGH POWER SWITCHING USE
CM50TU-24H MITSUBISHI

获取价格

MEDIUM POWER SWITCHING USE INSULATED TYPE
CM50TU-24H POWEREX

获取价格

Six IGBTMOD 50 Amperes/1200 Volts