CM4407
P-Channel 30V (D-S) Power MOSFET
Description
Applications
The CM4407 is the P-Channel enhancement mode power
field effect transistors with high cell density, trench tech-
nology. This high density process and design have been
optimized switching performance and especially tailored to
minimize on-state resistance.
Cellular Handsets and Accessories
Personal Digital Assistants
Portable Instrumentation
Load switch
Marking Information
Features
VDS: -30V
ID: -12.3A
Marking Code = CM4407
Date Code = XXXX
CM4407
XXXX
RDSON (@VGS=-20V) : < 11mΩ
RDSON(@VGS=-10V) : < 12.5mΩ
RDSON (@VGS=-4.5V) : < 25mΩ
High density cell design for extremely low RDSON
Excellent on-resistance and DC current capability
Equivalent Circuit and Pin Configuration
Ordering Information
SO-8
Part Number
Packaging
4000/Tape & Reel
Reel Size
CM4407
13 inch
Absolute Maximum Ratings (TA=25 ℃ unless otherwise noted)
Parameter
Symbol
VDS
Maximum
-30
Unit
V
Drain-source Voltage
Gate-source Voltage
VGS
±25
V
TA=25°C
TA=70°C
-12.3
-10.8
-48.2
2.5
A
Continuous Drain Current
Pulsed Drain Current (1)
ID
A
IDM
PD
A
Total Power Dissipation @ TA=25°C (2)
W
Thermal Resistance Junction-to-Ambient (2)
RθJA
50
°C/W
°C
Junction and Storage Temperature Range
TJ,TSTG
-55 to +150
Oct. 2019, Rev. 1.1
1 of 5
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