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CM400HU-24F PDF预览

CM400HU-24F

更新时间: 2024-11-17 22:05:03
品牌 Logo 应用领域
三菱 - MITSUBISHI 晶体开关晶体管功率控制双极性晶体管局域网高功率电源
页数 文件大小 规格书
4页 71K
描述
HIGH POWER SWITCHING USE

CM400HU-24F 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.18Is Samacsys:N
外壳连接:ISOLATED最大集电极电流 (IC):400 A
集电极-发射极最大电压:1200 V配置:SINGLE WITH BUILT-IN DIODE AND RTC
门极-发射极最大电压:20 VJESD-30 代码:R-XUFM-X4
元件数量:1端子数量:4
最高工作温度:150 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):1600 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICONVCEsat-Max:2.4 V
Base Number Matches:1

CM400HU-24F 数据手册

 浏览型号CM400HU-24F的Datasheet PDF文件第2页浏览型号CM400HU-24F的Datasheet PDF文件第3页浏览型号CM400HU-24F的Datasheet PDF文件第4页 
MITSUBISHI IGBT MODULES  
CM400HU-24F  
HIGH POWER SWITCHING USE  
CM400HU-24F  
¡IC ...................................................................400A  
¡VCES ......................................................... 1200V  
¡Insulated Type  
¡1-elements in a pack  
APPLICATION  
General purpose inverters & Servo controls, etc  
OUTLINE DRAWING & CIRCUIT DIAGRAM  
Dimensions in mm  
107  
4–φ6.5  
MOUNTING HOLES  
±0.25  
93  
13.5  
26  
29  
20.5  
G
E
C
CM  
E
18  
2–M4NUTS  
Tc measured point  
2–M8NUTS  
4
C
E
RTC  
E
G
LABEL  
CIRCUIT DIAGRAM  
Aug. 1999  

CM400HU-24F 替代型号

型号 品牌 替代类型 描述 数据表
CM400HU-24F POWEREX

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