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CM400HB-90H PDF预览

CM400HB-90H

更新时间: 2024-10-30 02:51:55
品牌 Logo 应用领域
三菱 - MITSUBISHI 晶体晶体管双极性晶体管高压
页数 文件大小 规格书
4页 59K
描述
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

CM400HB-90H 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.25外壳连接:ISOLATED
最大集电极电流 (IC):400 A集电极-发射极最大电压:4500 V
配置:COMPLEX门极-发射极最大电压:20 V
JESD-30 代码:R-XUFM-X7元件数量:2
端子数量:7最高工作温度:125 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):4300 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
VCEsat-Max:3.9 VBase Number Matches:1

CM400HB-90H 数据手册

 浏览型号CM400HB-90H的Datasheet PDF文件第2页浏览型号CM400HB-90H的Datasheet PDF文件第3页浏览型号CM400HB-90H的Datasheet PDF文件第4页 
MITSUBISHI HVIGBT MODULES  
CM400HB-90H  
HIGH POWER SWITCHING USE  
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules  
INSULATED TYPE  
CM400HB-90H  
IC...................................................................400A  
VCES ....................................................... 4500V  
Insulated Type  
1-element in a pack  
APPLICATION  
Inverters, Converters, DC choppers, Induction heating, DC to DC converters.  
OUTLINE DRAWING & CIRCUIT DIAGRAM  
Dimensions in mm  
130  
114  
4 - M8 NUTS  
±0.25  
57  
±0.25  
57  
C
C
C
C
C
G
E
E
E
E
E
CM  
C
E
G
CIRCUIT DIAGRAM  
10.35  
6 - φ7MOUNTING HOLES  
3 - M4 NUTS  
10.65  
48.8  
15  
61.5  
40  
5.2  
18  
LABEL  
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)  
Mar. 2003  

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