是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | Reach Compliance Code: | unknown |
风险等级: | 5.25 | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 400 A | 集电极-发射极最大电压: | 4500 V |
配置: | COMPLEX | 门极-发射极最大电压: | 20 V |
JESD-30 代码: | R-XUFM-X7 | 元件数量: | 2 |
端子数量: | 7 | 最高工作温度: | 125 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 4300 W |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | NO | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
VCEsat-Max: | 3.9 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CM400HG-130H | MITSUBISHI |
获取价格 |
HIGH POWER SWITCHING USE INSULATED TYPE | |
CM400HG-66H | MITSUBISHI |
获取价格 |
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules | |
CM400HU-24F | MITSUBISHI |
获取价格 |
HIGH POWER SWITCHING USE | |
CM400HU-24F | POWEREX |
获取价格 |
Trench Gate Design Single IGBTMOD⑩ 400 Ampere | |
CM400HU-24F_09 | MITSUBISHI |
获取价格 |
IGBT MODULES HIGH POWER SWITCHING USE | |
CM400HU-24H | MITSUBISHI |
获取价格 |
HIGH POWER SWITCHING USE INSULATED TYPE | |
CM400HU-24H | POWEREX |
获取价格 |
Single IGBTMOD 400 Amperes/1200 Volts | |
CM400HU-24H_09 | MITSUBISHI |
获取价格 |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE | |
CM400HX-24A | MITSUBISHI |
获取价格 |
IGBT MODULES HIGH POWER SWITCHING USE | |
CM400ST-24S1 | MITSUBISHI |
获取价格 |
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