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CM400DY-66H PDF预览

CM400DY-66H

更新时间: 2024-09-13 03:25:51
品牌 Logo 应用领域
三菱 - MITSUBISHI 晶体晶体管功率控制双极性晶体管高压局域网
页数 文件大小 规格书
4页 45K
描述
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

CM400DY-66H 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:FLANGE MOUNT, R-XUFM-X9
Reach Compliance Code:unknown风险等级:5.22
Is Samacsys:N外壳连接:ISOLATED
最大集电极电流 (IC):400 A集电极-发射极最大电压:3300 V
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE门极-发射极最大电压:20 V
JESD-30 代码:R-XUFM-X9元件数量:2
端子数量:9最高工作温度:150 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):3470 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):3000 ns标称接通时间 (ton):3000 ns
VCEsat-Max:5.72 VBase Number Matches:1

CM400DY-66H 数据手册

 浏览型号CM400DY-66H的Datasheet PDF文件第2页浏览型号CM400DY-66H的Datasheet PDF文件第3页浏览型号CM400DY-66H的Datasheet PDF文件第4页 
MITSUBISHI HVIGBT MODULES  
CM400DY-66H  
HIGH POWER SWITCHING USE  
INSULATED TYPE  
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules  
CM400DY-66H  
IC...................................................................400A  
VCES ....................................................... 3300V  
Insulated Type  
2-elements in a pack  
APPLICATION  
Inverters, Converters, DC choppers, Induction heating, DC to DC converters.  
OUTLINE DRAWING & CIRCUIT DIAGRAM  
Dimensions in mm  
130  
114  
4 - M8 NUTS  
57±0.25  
57±0.25  
C2  
E1  
E2  
C1  
G1  
C2  
G2  
E2  
E1  
C2  
E1  
C1  
E2  
CM  
CIRCUIT DIAGRAM  
E1  
E2(C1)  
G1  
G2  
C2  
7.2  
6 - φ 7 MOUNTING HOLES  
5 - M4 NUTS  
36.3  
24.5  
48.8  
53.6  
15  
61.5  
5.7  
15  
39.5  
18  
LABEL  
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)  
Mar. 2003  

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