Datasheet > 晶体管 > IGBT> CM350DU-5F

CM350DU-5F

更新时间： 2024-11-20 22:36:15

品牌	Logo	应用领域
POWEREX		晶体晶体管功率控制双极性晶体管栅局域网超快速恢复二极管
页数	文件大小	规格书
4页	58K
描述
Trench Gate Design Dual IGBTMOD⑩ 350 Amperes/250 Volts

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中文翻译

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数据手册

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CM350DU-5F 数据手册

CM350DU-5F

Powerex, Inc., 200 Hillis Street,Youngwood, Pennsylvania 15697-1800 (724) 925-7272

Trench Gate Design

Dual IGBTMOD™

350 Amperes/250 Volts

Measured

Point

K 4 - Mounting

Holes

Description:

Powerex IGBTMOD™ Modules

are designed for use in switching

applications. Each module con-

sists of two IGBT Transistors in a

half-bridge configuration with each

transistor having a reverse-

3 - M6 NUTS

0.110 - 0.5 Tab

connected super-fast recovery

free-wheel diode. All components

and interconnects are isolated

from the heat sinking baseplate,

offering simplified system assem-

bly and thermal management.

Features:

□ Low Drive Power

□ Low V

CE(sat)

□ Discrete Super-Fast Recovery

Free-Wheel Diode

C2E1

□ High Frequency Operation

(15-20kHz)

□ Isolated Baseplate for Easy

Heat Sinking

Outline Drawing and Circuit Diagram

Applications:

□ DC Motor Control

□ Boost Regulator

Dimensions

Inches

4.33

Millimeters

110.0

Dimensions

Inches

0.59

Millimeters

15.0

3.66±0.01

3.15

93.0±0.25

80.0

0.26 Dia.

6.5 Dia.

Ordering Information:

1.14 +0.04/-0.02 29 +1.0/-0.5

Example: Select the complete

module number you desire from

the table - i.e. CM350DU-5F is a

2.44±0.01

0.55

62.0±0.25

14.0

0.71

0.33

0.28

0.83

0.98

18.0

8.5

250V (V

), 350 Ampere Trench

CES

0.86

21.75

7.0

Gate Design Dual IGBTMOD™

Power Module.

0.94

24.0

21.0

25.0

0.24

6.0

Current Rating

Amperes

CES

Volts (x 50)

Type

350

361

12 3 4

中文翻译

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