Datasheet > CM3415

CM3415

更新时间： 2024-11-21 17:15:43

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
5页	1246K
描述
SOT-23

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CM3415 数据手册

CM3415

P-Channel 20V (D-S) Power MOSFET

Description

Applications

CM3415 is the P-Channel enhancement mode power field

effect transistors with high cell density, trench technology.

This high density process and design have been optimized

switching performance and especially tailored to minimize

on-state resistance.



Cellular Handsets and Accessories

Personal Digital Assistants

Portable Instrumentation

Load switch

Marking Information

Features



VDS: -20V

ID: -4.3A

Marking Code = 3D

Date Code = XX

3DXX

RDS_ON(@VGS=-4.5V) : < 49mΩ

RDS_ON(@VGS=-2.5V) : < 62mΩ

RDS_ON(@VGS=-1.8V) : < 100mΩ

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

Ordering Information

Equivalent Circuit and Pin Configuration

SOT-23 (Top View)

Part Number

Packaging

3000/Tape & Reel

Reel Size

CM3415

7 inch

Absolute Maximum Ratings (TA=25 ℃ unless otherwise noted)

Parameter

Symbol

VDS

Maximum

-20

Unit

Drain-source Voltage

Gate-source Voltage

VGS

±10

TA=25°C

TA=70°C

-4.3

Continuous Drain Current

Pulsed Drain Current⁽¹⁾

-3.5

IDM

-17.2

1.4

Total Power Dissipation @ TA=25°C ⁽²⁾

Thermal Resistance Junction-to-Ambient ⁽²⁾

Junction and Storage Temperature Range

RθJA

°C/W

°C

TJ,TSTG

-55 to +150

Jul. 2021, Rev. 1.0

1 of 5

www.appliedpowermicro.com

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