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CM3407 PDF预览

CM3407

更新时间: 2024-11-19 17:15:27
品牌 Logo 应用领域
应能微 - APPLIED POWER /
页数 文件大小 规格书
5页 1228K
描述
SOT-23

CM3407 数据手册

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CM3407  
P-Channel 30V (D-S) Power MOSFET  
Description  
Applications  
CM3407 is the P-Channel enhancement mode power field  
effect transistors with high cell density, trench technology.  
This high density process and design have been optimized  
switching performance and especially tailored to minimize  
on-state resistance.  
Cellular Handsets and Accessories  
Personal Digital Assistants  
Portable Instrumentation  
Load switch  
Marking Information  
Features  
VDS: -30V  
Marking Code = 4C  
Date Code = XX  
ID: -4.1A  
4CXX  
RDSON (@VGS=-10V) : < 55mΩ  
RDSON (@VGS=-4.5V) : < 68mΩ  
High density cell design for extremely low RDSON  
Excellent on-resistance and DC current capability  
Ordering Information  
Equivalent Circuit and Pin Configuration  
SOT-23 (Top View)  
Part Number  
Packaging  
3000/Tape & Reel  
Reel Size  
CM3407  
7 inch  
Absolute Maximum Ratings (TA=25 unless otherwise noted)  
Parameter  
Symbol  
VDS  
Maximum  
-30  
Unit  
V
Drain-source Voltage  
Gate-source Voltage  
VGS  
±20  
V
TA=25°C  
TA=70°C  
-4.1  
A
Continuous Drain Current  
Pulsed Drain Current(1)  
ID  
-3.7  
A
IDM  
PD  
-16  
A
Total Power Dissipation @ TA=25°C (2)  
Thermal Resistance Junction-to-Ambient (2)  
Junction and Storage Temperature Range  
1.4  
W
RθJA  
90  
°C/W  
°C  
TJ,TSTG  
-55 to +150  
Oct. 2019, Rev. 1.0  
1 of 5  
www.appliedpowermicro.com  

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