Datasheet > CM3134BT

CM3134BT

更新时间： 2024-11-19 17:15:27

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
5页	1224K
描述
SOT-523

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CM3134BT 数据手册

CM3134BT

N-Channel 20V (D-S) Power MOSFET

Description

Applications

CM3134BT is the N-Channel enhancement mode power

field effect transistors with high cell density, trench tech-

nology. This high density process and design have been

optimized switching performance and especially tailored to

minimize on-state resistance.



Cellular Handsets and Accessories

Personal Digital Assistants

Portable Instrumentation

Load switch

Marking Information

Features



VDS: 20V

Device Code = T3

Date Code = XX

ID: 0.75A

T3XX

RDS_ON(@VGS=4.5V) : < 330mΩ

RDS_ON(@VGS=2.5V) : < 480mΩ

RDS_ON(@VGS=1.8V) : < 800mΩ

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

Ordering Information

Equivalent Circuit and Pin Configuration

SOT-523 (Top View)

Part Number

Packaging

3000/Tape & Reel

Reel Size

CM3134BT

7 inch

Absolute Maximum Ratings (TA=25 ℃ unless otherwise noted)

Parameter

Symbol

VDS

Maximum

Unit

Drain-source Voltage

Gate-source Voltage

VGS

±10

0.75

TA=25°C ,Steady State

Continuous Drain Current

Pulsed Drain Current⁽¹⁾

TA=75°C ,Steady State

0.58

3.0

IDM

Total Power Dissipation @ TA=25°C ⁽²⁾

@Steady State

310

°C/W

°C

Thermal Resistance Junction-to-Ambient ⁽²⁾@Steady State

RθJA

400

Junction and Storage Temperature Range

TJ,TSTG

-55 to +150

Dec. 2021, Rev. 1.0

1 of 5

www.appliedpowermicro.com

12 3 4 5

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