Datasheet > CM2616E

CM2616E

更新时间： 2024-11-02 17:15:47

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
5页	1159K
描述
SOT-23-6

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CM2616E 数据手册

CM2616E

N-Channel 20V (D-S) Power MOSFET

Description

Applications

CM2616E is the N-Channel enhancement mode power

field effect transistors with high cell density, trench tech-

nology. This high density process and design have been

optimized switching performance and especially tailored to

minimize on-state resistance.



Cellular Handsets and Accessories

Personal Digital Assistants

Portable Instrumentation

Load switch

Marking Information

Features

G1 D1/D2 G2



VDS: 20V

ID: 6A

Marking Code = 4F

Date Code = XX

RDS_ON(@VGS=4.5V) : < 24mΩ

RDS_ON(@VGS=2.5V) : < 28mΩ

ESD Rating: 2KV (HBM)

4FXX

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

S1 D1/D2 S2

PIN 1

Ordering Information

Equivalent Circuit and Pin Configuration

Part Number

Packaging

3000/Tape & Reel

Reel Size

CM2616E

7 inch

Absolute Maximum Ratings (TA=25 ℃ unless otherwise noted)

Parameter

Symbol

VDS

Maximum

Unit

Drain-source Voltage

Gate-source Voltage

VGS

±10

TA=25°C

TA=70°C

Continuous Drain Current

Pulsed Drain Current⁽¹⁾

4.7

IDM

1.4

Total Power Dissipation @ TA=25°C ⁽²⁾

Thermal Resistance Junction-to-Ambient ⁽²⁾

Junction and Storage Temperature Range

RθJA

°C/W

°C

TJ,TSTG

-55 to +150

Nov. 2020, Rev. 1.1

1 of 5

www.appliedpowermicro.com

12 3 4 5

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