Datasheet > CM2601TD

CM2601TD

更新时间： 2024-10-31 17:15:39

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
5页	1109K
描述
SOT-23-6

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CM2601TD 数据手册

CM2601TD

P-Channel 20V (D-S) Power MOSFET

Description

Applications

CM2601TD is the P-Channel enhancement mode power

field effect transistors with high cell density, trench tech-

nology. This high density process and design have been

optimized switching performance and especially tailored to

minimize on-state resistance.



Cellular Handsets and Accessories

Personal Digital Assistants

Portable Instrumentation

Load switch

Marking Information

Features

D1 S1 D2



VDS: -20V

ID: -2.1A

Marking Code = 1H

Date Code = XX

RDS_ON(@VGS=-4.5V) : < 110mΩ

RDS_ON(@VGS=-2.5V) : < 140mΩ

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

1HXX

G1 S2 G2

PIN 1

Equivalent Circuit and Pin Configuration

Ordering Information

SOT-23-6 (Top View)

Part Number

Packaging

3000/Tape & Reel

Reel Size

CM2601TD

7 inch

Absolute Maximum Ratings (TA=25 ℃ unless otherwise noted)

Parameter

Symbol

VDS

Maximum

-20

Unit

Drain-source Voltage

Gate-source Voltage

VGS

±10

TA=25°C

TA=70°C

-2.1

Continuous Drain Current

Pulsed Drain Current⁽¹⁾

-1.5

IDM

-8

Total Power Dissipation @ TA=25°C ⁽²⁾

Thermal Resistance Junction-to-Ambient ⁽²⁾

Junction and Storage Temperature Range

0.7

RθJA

178

°C/W

°C

TJ,TSTG

-55 to +150

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