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CM2601TD PDF预览

CM2601TD

更新时间: 2024-11-18 17:15:39
品牌 Logo 应用领域
应能微 - APPLIED POWER /
页数 文件大小 规格书
5页 1109K
描述
SOT-23-6

CM2601TD 数据手册

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CM2601TD  
P-Channel 20V (D-S) Power MOSFET  
Description  
Applications  
CM2601TD is the P-Channel enhancement mode power  
field effect transistors with high cell density, trench tech-  
nology. This high density process and design have been  
optimized switching performance and especially tailored to  
minimize on-state resistance.  
Cellular Handsets and Accessories  
Personal Digital Assistants  
Portable Instrumentation  
Load switch  
Marking Information  
Features  
D1 S1 D2  
VDS: -20V  
ID: -2.1A  
Marking Code = 1H  
Date Code = XX  
RDSON (@VGS=-4.5V) : < 110mΩ  
RDSON (@VGS=-2.5V) : < 140mΩ  
High density cell design for extremely low RDSON  
Excellent on-resistance and DC current capability  
1HXX  
G1 S2 G2  
PIN 1  
Equivalent Circuit and Pin Configuration  
Ordering Information  
SOT-23-6 (Top View)  
Part Number  
Packaging  
3000/Tape & Reel  
Reel Size  
CM2601TD  
7 inch  
Absolute Maximum Ratings (TA=25 unless otherwise noted)  
Parameter  
Symbol  
VDS  
Maximum  
-20  
Unit  
V
Drain-source Voltage  
Gate-source Voltage  
VGS  
±10  
V
TA=25°C  
TA=70°C  
-2.1  
A
Continuous Drain Current  
Pulsed Drain Current(1)  
ID  
-1.5  
A
IDM  
PD  
-8  
A
Total Power Dissipation @ TA=25°C (2)  
Thermal Resistance Junction-to-Ambient (2)  
Junction and Storage Temperature Range  
0.7  
W
RθJA  
178  
°C/W  
°C  
TJ,TSTG  
-55 to +150  
Revision_1.0  
1 of 5  
www.appliedpowermicro.com  

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